Electronic and vibrational properties of interstitial clusters in degenerately boron-doped silicon.
- DOI
- 10.1088/1361-648x/ae191e
- Published
- 2025 Nov 13
- Container
- Journal of physics. Condensed matter : an Institute of Physics journal
- Publisher
- Not recorded
- Open access
- no
Credibility signals
limited evidence Score 43/100 under policy 1.0.0. This is a metadata assessment, not a judgment of the paper's conclusions.
Show all credibility signals
- cautionDOI registered: No matching Crossref record was present in this response.
- cautionDOI resolves: No matching Crossref record was present in this response.
- not scoredDirectory of Open Access Journals: No matching DOAJ record was present in this response. No allow-list match; this is not evidence of low credibility.
- not scoredMEDLINE indexed: Not checked or no result supplied; no credibility inference made.
- not scoredOpenAlex core source: Not checked or no result supplied; no credibility inference made.
- not scoredKnown publisher allow-list: Not checked or no result supplied; no credibility inference made.
- not scoredROR affiliation: Not checked or no result supplied; no credibility inference made.
- not scoredRetraction Watch retraction: No retraction notice matched this DOI in the deployed snapshot. No matching event found; coverage may be incomplete.
- not scoredRetraction Watch expression of concern: No expression of concern notice matched this DOI in the deployed snapshot. No matching event found; coverage may be incomplete.
- not scoredRetraction Watch correction: No correction notice matched this DOI in the deployed snapshot. No matching event found; coverage may be incomplete.
- not scoredRetraction Watch reinstatement: No reinstatement notice matched this DOI in the deployed snapshot. No matching event found; coverage may be incomplete.
- not scoredOpen access status: Not checked or no result supplied; no credibility inference made.
- not scoredPublication license: Not checked or no result supplied; no credibility inference made.
- not scoredPublication version: A publication version was supplied but is not scored.
- cautionMetadata completeness: 5 of 6 scored descriptive metadata groups are present; missing fields increase uncertainty.
Cite this work
BibTeX
@article{allodium:10.1088/1361-648x/ae191e,
title = {Electronic and vibrational properties of interstitial clusters in degenerately boron-doped silicon.},
author = {Dhamotharan K and Wang S and Hayes SP and Ramasse QM and Phillips LJ and Major JD and Zoppi G and Clark SJ and Mendis BG},
year = {2025},
journal = {Journal of physics. Condensed matter : an Institute of Physics journal},
doi = {10.1088/1361-648x/ae191e},
url = {https://doi.org/10.1088/1361-648x/ae191e}
}RIS
TY - JOUR TI - Electronic and vibrational properties of interstitial clusters in degenerately boron-doped silicon. AU - Dhamotharan K AU - Wang S AU - Hayes SP AU - Ramasse QM AU - Phillips LJ AU - Major JD AU - Zoppi G AU - Clark SJ AU - Mendis BG PY - 2025 JO - Journal of physics. Condensed matter : an Institute of Physics journal DO - 10.1088/1361-648x/ae191e UR - https://doi.org/10.1088/1361-648x/ae191e ER -
APA
K, D., S, W., SP, H., QM, R., LJ, P., JD, M., G, Z., SJ, C., & BG, M. (2025). Electronic and vibrational properties of interstitial clusters in degenerately boron-doped silicon.. Journal of physics. Condensed matter : an Institute of Physics journal. https://doi.org/10.1088/1361-648x/ae191e
Source records
- pubmed · retrieved 2026-09-25T07:27:21.459Z
- europe-pmc · retrieved 2026-09-25T07:27:21.459Z