Emerging transistors and magnetic memories for harsh radiation environments.

Zhou D, Wang X, Zhang K, Lin X, Zhao W

DOI: 10.1088/1361-648x/ae19b8
Published: 2025 Nov 18
Container: Journal of physics. Condensed matter : an Institute of Physics journal
Publisher: Not recorded
Open access: unknown

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Cite this work

BibTeX

@article{allodium:10.1088/1361-648x/ae19b8,
  title = {Emerging transistors and magnetic memories for harsh radiation environments.},
  author = {Zhou D and Wang X and Zhang K and Lin X and Zhao W},
  year = {2025},
  journal = {Journal of physics. Condensed matter : an Institute of Physics journal},
  doi = {10.1088/1361-648x/ae19b8},
  url = {https://doi.org/10.1088/1361-648x/ae19b8}
}

RIS

TY  - JOUR
TI  - Emerging transistors and magnetic memories for harsh radiation environments.
AU  - Zhou D
AU  - Wang X
AU  - Zhang K
AU  - Lin X
AU  - Zhao W
PY  - 2025
JO  - Journal of physics. Condensed matter : an Institute of Physics journal
DO  - 10.1088/1361-648x/ae19b8
UR  - https://doi.org/10.1088/1361-648x/ae19b8
ER  -

APA

D, Z., X, W., K, Z., X, L., & W, Z. (2025). Emerging transistors and magnetic memories for harsh radiation environments.. Journal of physics. Condensed matter : an Institute of Physics journal. https://doi.org/10.1088/1361-648x/ae19b8

Source records

pubmed · retrieved 2026-09-26T20:50:49.313Z