Developing a valence force field model for wurtzite semiconductors by exploiting similarities with [111]-oriented zinc blende systems: the case of wurtzite boron nitride, III-N materials and (B,In,Ga)N alloys.
- DOI
- 10.1088/1361-648x/ae6699
- Published
- 2026-05-26
- Container
- J Phys Condens Matter
- Publisher
- Not recorded
- Open access
- no
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Cite this work
BibTeX
@article{allodium:10.1088/1361-648x/ae6699,
title = {Developing a valence force field model for wurtzite semiconductors by exploiting similarities with [111]-oriented zinc blende systems: the case of wurtzite boron nitride, III-N materials and (B,In,Ga)N alloys.},
author = {Power A and Nies CL and Schulz S.},
year = {2026},
journal = {J Phys Condens Matter},
doi = {10.1088/1361-648x/ae6699},
url = {https://doi.org/10.1088/1361-648x/ae6699}
}RIS
TY - JOUR TI - Developing a valence force field model for wurtzite semiconductors by exploiting similarities with [111]-oriented zinc blende systems: the case of wurtzite boron nitride, III-N materials and (B,In,Ga)N alloys. AU - Power A AU - Nies CL AU - Schulz S. PY - 2026 JO - J Phys Condens Matter DO - 10.1088/1361-648x/ae6699 UR - https://doi.org/10.1088/1361-648x/ae6699 ER -
APA
A, P., CL, N., & S., S. (2026). Developing a valence force field model for wurtzite semiconductors by exploiting similarities with [111]-oriented zinc blende systems: the case of wurtzite boron nitride, III-N materials and (B,In,Ga)N alloys.. J Phys Condens Matter. https://doi.org/10.1088/1361-648x/ae6699
Source records
- europe-pmc · retrieved 2026-11-10T12:59:55.229Z