Facile fabrication of ZnO nanowire memory device based on chemically-treated surface defects.

Park W, Kim TH, Nam JH, Jang HY, Pak Y, Min JW, Yun J, Cho B

DOI: 10.1088/1361-6528/aaff74
Published: 2019 Apr 12
Container: Nanotechnology
Publisher: Not recorded
Open access: unknown

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Cite this work

BibTeX

@article{allodium:10.1088/1361-6528/aaff74,
  title = {Facile fabrication of ZnO nanowire memory device based on chemically-treated surface defects.},
  author = {Park W and Kim TH and Nam JH and Jang HY and Pak Y and Min JW and Yun J and Cho B},
  year = {2019},
  journal = {Nanotechnology},
  doi = {10.1088/1361-6528/aaff74},
  url = {https://doi.org/10.1088/1361-6528/aaff74}
}

RIS

TY  - JOUR
TI  - Facile fabrication of ZnO nanowire memory device based on chemically-treated surface defects.
AU  - Park W
AU  - Kim TH
AU  - Nam JH
AU  - Jang HY
AU  - Pak Y
AU  - Min JW
AU  - Yun J
AU  - Cho B
PY  - 2019
JO  - Nanotechnology
DO  - 10.1088/1361-6528/aaff74
UR  - https://doi.org/10.1088/1361-6528/aaff74
ER  -

APA

W, P., TH, K., JH, N., HY, J., Y, P., JW, M., J, Y., & B, C. (2019). Facile fabrication of ZnO nanowire memory device based on chemically-treated surface defects.. Nanotechnology. https://doi.org/10.1088/1361-6528/aaff74

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pubmed · retrieved 2026-09-25T08:38:57.038Z