Ultrathin tin sulfide field-effect transistors with subthreshold slope below 60 mV/decade.

Dragoman M, Dinescu A, Avram A, Dragoman D, Vulpe S, Aldrigo M, Braniste T, Suman V, Rusu E, Tiginyanu I

Open source

DOI
10.1088/1361-6528/ac7cf8
Published
2022 Jul 15
Container
Nanotechnology
Publisher
Not recorded
Open access
unknown

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BibTeX

@article{allodium:10.1088/1361-6528/ac7cf8,
  title = {Ultrathin tin sulfide field-effect transistors with subthreshold slope below 60 mV/decade.},
  author = {Dragoman M and Dinescu A and Avram A and Dragoman D and Vulpe S and Aldrigo M and Braniste T and Suman V and Rusu E and Tiginyanu I},
  year = {2022},
  journal = {Nanotechnology},
  doi = {10.1088/1361-6528/ac7cf8},
  url = {https://doi.org/10.1088/1361-6528/ac7cf8}
}

RIS

TY  - JOUR
TI  - Ultrathin tin sulfide field-effect transistors with subthreshold slope below 60 mV/decade.
AU  - Dragoman M
AU  - Dinescu A
AU  - Avram A
AU  - Dragoman D
AU  - Vulpe S
AU  - Aldrigo M
AU  - Braniste T
AU  - Suman V
AU  - Rusu E
AU  - Tiginyanu I
PY  - 2022
JO  - Nanotechnology
DO  - 10.1088/1361-6528/ac7cf8
UR  - https://doi.org/10.1088/1361-6528/ac7cf8
ER  - 

APA

M, D., A, D., A, A., D, D., S, V., M, A., T, B., V, S., E, R., & I, T. (2022). Ultrathin tin sulfide field-effect transistors with subthreshold slope below 60 mV/decade.. Nanotechnology. https://doi.org/10.1088/1361-6528/ac7cf8

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