Ultrathin tin sulfide field-effect transistors with subthreshold slope below 60 mV/decade.
- DOI
- 10.1088/1361-6528/ac7cf8
- Published
- 2022 Jul 15
- Container
- Nanotechnology
- Publisher
- Not recorded
- Open access
- unknown
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Cite this work
BibTeX
@article{allodium:10.1088/1361-6528/ac7cf8,
title = {Ultrathin tin sulfide field-effect transistors with subthreshold slope below 60 mV/decade.},
author = {Dragoman M and Dinescu A and Avram A and Dragoman D and Vulpe S and Aldrigo M and Braniste T and Suman V and Rusu E and Tiginyanu I},
year = {2022},
journal = {Nanotechnology},
doi = {10.1088/1361-6528/ac7cf8},
url = {https://doi.org/10.1088/1361-6528/ac7cf8}
}RIS
TY - JOUR TI - Ultrathin tin sulfide field-effect transistors with subthreshold slope below 60 mV/decade. AU - Dragoman M AU - Dinescu A AU - Avram A AU - Dragoman D AU - Vulpe S AU - Aldrigo M AU - Braniste T AU - Suman V AU - Rusu E AU - Tiginyanu I PY - 2022 JO - Nanotechnology DO - 10.1088/1361-6528/ac7cf8 UR - https://doi.org/10.1088/1361-6528/ac7cf8 ER -
APA
M, D., A, D., A, A., D, D., S, V., M, A., T, B., V, S., E, R., & I, T. (2022). Ultrathin tin sulfide field-effect transistors with subthreshold slope below 60 mV/decade.. Nanotechnology. https://doi.org/10.1088/1361-6528/ac7cf8
Source records
- pubmed · retrieved 2026-09-26T17:16:28.409Z