Non-radiative recombination centres in InGaN/GaN nanowires revealed by statistical analysis of cathodoluminescence intensity maps and electron microscopy.

Quach AMN, Rochat N, Rouvière JL, Napierala J, Daudin B.

Open source

DOI
10.1088/1361-6528/ad7b43
Published
2024-09-26
Container
Nanotechnology
Publisher
Not recorded
Open access
no

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BibTeX

@article{allodium:10.1088/1361-6528/ad7b43,
  title = {Non-radiative recombination centres in InGaN/GaN nanowires revealed by statistical analysis of cathodoluminescence intensity maps and electron microscopy.},
  author = {Quach AMN and  Rochat N and  Rouvière JL and  Napierala J and  Daudin B.},
  year = {2024},
  journal = {Nanotechnology},
  doi = {10.1088/1361-6528/ad7b43},
  url = {https://doi.org/10.1088/1361-6528/ad7b43}
}

RIS

TY  - JOUR
TI  - Non-radiative recombination centres in InGaN/GaN nanowires revealed by statistical analysis of cathodoluminescence intensity maps and electron microscopy.
AU  - Quach AMN
AU  -  Rochat N
AU  -  Rouvière JL
AU  -  Napierala J
AU  -  Daudin B.
PY  - 2024
JO  - Nanotechnology
DO  - 10.1088/1361-6528/ad7b43
UR  - https://doi.org/10.1088/1361-6528/ad7b43
ER  - 

APA

AMN, Q., N, R., JL, R., J, N., & B., D. (2024). Non-radiative recombination centres in InGaN/GaN nanowires revealed by statistical analysis of cathodoluminescence intensity maps and electron microscopy.. Nanotechnology. https://doi.org/10.1088/1361-6528/ad7b43

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