Non-radiative recombination centres in InGaN/GaN nanowires revealed by statistical analysis of cathodoluminescence intensity maps and electron microscopy.
- DOI
- 10.1088/1361-6528/ad7b43
- Published
- 2024-09-26
- Container
- Nanotechnology
- Publisher
- Not recorded
- Open access
- no
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Cite this work
BibTeX
@article{allodium:10.1088/1361-6528/ad7b43,
title = {Non-radiative recombination centres in InGaN/GaN nanowires revealed by statistical analysis of cathodoluminescence intensity maps and electron microscopy.},
author = {Quach AMN and Rochat N and Rouvière JL and Napierala J and Daudin B.},
year = {2024},
journal = {Nanotechnology},
doi = {10.1088/1361-6528/ad7b43},
url = {https://doi.org/10.1088/1361-6528/ad7b43}
}RIS
TY - JOUR TI - Non-radiative recombination centres in InGaN/GaN nanowires revealed by statistical analysis of cathodoluminescence intensity maps and electron microscopy. AU - Quach AMN AU - Rochat N AU - Rouvière JL AU - Napierala J AU - Daudin B. PY - 2024 JO - Nanotechnology DO - 10.1088/1361-6528/ad7b43 UR - https://doi.org/10.1088/1361-6528/ad7b43 ER -
APA
AMN, Q., N, R., JL, R., J, N., & B., D. (2024). Non-radiative recombination centres in InGaN/GaN nanowires revealed by statistical analysis of cathodoluminescence intensity maps and electron microscopy.. Nanotechnology. https://doi.org/10.1088/1361-6528/ad7b43
Source records
- europe-pmc · retrieved 2026-09-26T10:10:45.097Z
- hal · retrieved 2026-09-26T10:10:45.112Z