Artificial synapses based on HfO(x)/TiO(y)memristor devices for neuromorphic applications.

Özkal B, Al-Jawfi NAAS, Ekinci G, Rameev BZ, Khaibullin RI, Kazan S

DOI: 10.1088/1361-6528/ad857f
Published: 2024 Oct 17
Container: Nanotechnology
Publisher: Not recorded
Open access: unknown

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Cite this work

BibTeX

@article{allodium:10.1088/1361-6528/ad857f,
  title = {Artificial synapses based on HfO(x)/TiO(y)memristor devices for neuromorphic applications.},
  author = {Özkal B and Al-Jawfi NAAS and Ekinci G and Rameev BZ and Khaibullin RI and Kazan S},
  year = {2024},
  journal = {Nanotechnology},
  doi = {10.1088/1361-6528/ad857f},
  url = {https://doi.org/10.1088/1361-6528/ad857f}
}

RIS

TY  - JOUR
TI  - Artificial synapses based on HfO(x)/TiO(y)memristor devices for neuromorphic applications.
AU  - Özkal B
AU  - Al-Jawfi NAAS
AU  - Ekinci G
AU  - Rameev BZ
AU  - Khaibullin RI
AU  - Kazan S
PY  - 2024
JO  - Nanotechnology
DO  - 10.1088/1361-6528/ad857f
UR  - https://doi.org/10.1088/1361-6528/ad857f
ER  -

APA

B, Ö., NAAS, A., G, E., BZ, R., RI, K., & S, K. (2024). Artificial synapses based on HfO(x)/TiO(y)memristor devices for neuromorphic applications.. Nanotechnology. https://doi.org/10.1088/1361-6528/ad857f

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pubmed · retrieved 2026-09-25T20:02:20.803Z