DFT coupled with NEGF study of N-type MOSFET based on 2D Bi <sub>2</sub> C <sub>3</sub> semiconductor
- DOI
- 10.1088/1361-6528/ae2922
- Published
- 2025-12-23
- Container
- Nanotechnology
- Publisher
- IOP Publishing
- Open access
- unknown
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Cite this work
BibTeX
@article{allodium:10.1088/1361-6528/ae2922,
title = {DFT coupled with NEGF study of N-type MOSFET based on 2D Bi
<sub>2</sub>
C
<sub>3</sub>
semiconductor},
author = {Yongjun Huang and Jialin Yang and Weicong Sun and Hengze Qu and Chuyao Chen and Huipu Wang and Jia Dong and Xiaoqin Shi and Shengli Zhang},
year = {2025},
journal = {Nanotechnology},
doi = {10.1088/1361-6528/ae2922},
url = {https://doi.org/10.1088/1361-6528/ae2922}
}RIS
TY - JOUR
TI - DFT coupled with NEGF study of N-type MOSFET based on 2D Bi
<sub>2</sub>
C
<sub>3</sub>
semiconductor
AU - Yongjun Huang
AU - Jialin Yang
AU - Weicong Sun
AU - Hengze Qu
AU - Chuyao Chen
AU - Huipu Wang
AU - Jia Dong
AU - Xiaoqin Shi
AU - Shengli Zhang
PY - 2025
JO - Nanotechnology
DO - 10.1088/1361-6528/ae2922
UR - https://doi.org/10.1088/1361-6528/ae2922
ER - APA
Huang, Y., Yang, J., Sun, W., Qu, H., Chen, C., Wang, H., Dong, J., Shi, X., & Zhang, S. (2025). DFT coupled with NEGF study of N-type MOSFET based on 2D Bi <sub>2</sub> C <sub>3</sub> semiconductor. Nanotechnology. https://doi.org/10.1088/1361-6528/ae2922
Source records
- crossref · retrieved 2026-09-26T14:56:06.904Z