Growth behavior during metalorganic chemical vapor deposition of MoS(2)using di-tert-butyl sulfide as organic sulfur precursor.

Deijkers S, Medina Silva H, Manasi A, Pasko S, Kessels WMM, Mackus A, Groven B, Delabie A

DOI: 10.1088/1361-6528/ae2e05
Published: 2025 Dec 17
Container: Nanotechnology
Publisher: Not recorded
Open access: unknown

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Cite this work

BibTeX

@article{allodium:10.1088/1361-6528/ae2e05,
  title = {Growth behavior during metalorganic chemical vapor deposition of MoS(2)using di-tert-butyl sulfide as organic sulfur precursor.},
  author = {Deijkers S and Medina Silva H and Manasi A and Pasko S and Kessels WMM and Mackus A and Groven B and Delabie A},
  year = {2025},
  journal = {Nanotechnology},
  doi = {10.1088/1361-6528/ae2e05},
  url = {https://doi.org/10.1088/1361-6528/ae2e05}
}

RIS

TY  - JOUR
TI  - Growth behavior during metalorganic chemical vapor deposition of MoS(2)using di-tert-butyl sulfide as organic sulfur precursor.
AU  - Deijkers S
AU  - Medina Silva H
AU  - Manasi A
AU  - Pasko S
AU  - Kessels WMM
AU  - Mackus A
AU  - Groven B
AU  - Delabie A
PY  - 2025
JO  - Nanotechnology
DO  - 10.1088/1361-6528/ae2e05
UR  - https://doi.org/10.1088/1361-6528/ae2e05
ER  -

APA

S, D., H, M. S., A, M., S, P., WMM, K., A, M., B, G., & A, D. (2025). Growth behavior during metalorganic chemical vapor deposition of MoS(2)using di-tert-butyl sulfide as organic sulfur precursor.. Nanotechnology. https://doi.org/10.1088/1361-6528/ae2e05

Source records

pubmed · retrieved 2026-09-27T00:19:22.429Z