Compact modeling of Pd-MoS<sub>2</sub>self-rectifying RRAM based on modulated Schottky barrier equation.
- DOI
- 10.1088/1361-6528/ae83c0
- Published
- 2026-07-20
- Container
- Nanotechnology
- Publisher
- Not recorded
- Open access
- no
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Cite this work
BibTeX
@article{allodium:10.1088/1361-6528/ae83c0,
title = {Compact modeling of Pd-MoS\<sub\>2\</sub\>self-rectifying RRAM based on modulated Schottky barrier equation.},
author = {Shin Y and Jang D and Kwon MW.},
year = {2026},
journal = {Nanotechnology},
doi = {10.1088/1361-6528/ae83c0},
url = {https://doi.org/10.1088/1361-6528/ae83c0}
}RIS
TY - JOUR TI - Compact modeling of Pd-MoS<sub>2</sub>self-rectifying RRAM based on modulated Schottky barrier equation. AU - Shin Y AU - Jang D AU - Kwon MW. PY - 2026 JO - Nanotechnology DO - 10.1088/1361-6528/ae83c0 UR - https://doi.org/10.1088/1361-6528/ae83c0 ER -
APA
Y, S., D, J., & MW., K. (2026). Compact modeling of Pd-MoS<sub>2</sub>self-rectifying RRAM based on modulated Schottky barrier equation.. Nanotechnology. https://doi.org/10.1088/1361-6528/ae83c0
Source records
- europe-pmc · retrieved 2026-11-10T12:14:07.317Z