Compact modeling of Pd-MoS(2)self-rectifying RRAM based on modulated Schottky barrier equation.

Shin Y, Jang D, Kwon MW

DOI: 10.1088/1361-6528/ae83c0
Published: 2026 Jul 20
Container: Nanotechnology
Publisher: Not recorded
Open access: unknown

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Cite this work

BibTeX

@article{allodium:10.1088/1361-6528/ae83c0,
  title = {Compact modeling of Pd-MoS(2)self-rectifying RRAM based on modulated Schottky barrier equation.},
  author = {Shin Y and Jang D and Kwon MW},
  year = {2026},
  journal = {Nanotechnology},
  doi = {10.1088/1361-6528/ae83c0},
  url = {https://doi.org/10.1088/1361-6528/ae83c0}
}

RIS

TY  - JOUR
TI  - Compact modeling of Pd-MoS(2)self-rectifying RRAM based on modulated Schottky barrier equation.
AU  - Shin Y
AU  - Jang D
AU  - Kwon MW
PY  - 2026
JO  - Nanotechnology
DO  - 10.1088/1361-6528/ae83c0
UR  - https://doi.org/10.1088/1361-6528/ae83c0
ER  -

APA

Y, S., D, J., & MW, K. (2026). Compact modeling of Pd-MoS(2)self-rectifying RRAM based on modulated Schottky barrier equation.. Nanotechnology. https://doi.org/10.1088/1361-6528/ae83c0

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pubmed · retrieved 2026-09-25T08:53:18.371Z