Microscopic impact of isolated and clustered threading dislocations on GaN-on-GaN Schottky diode performance.
- DOI
- 10.1088/1361-6528/ae93c1
- Published
- 2026 Aug 13
- Container
- Nanotechnology
- Publisher
- Not recorded
- Open access
- unknown
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Cite this work
BibTeX
@article{allodium:10.1088/1361-6528/ae93c1,
title = {Microscopic impact of isolated and clustered threading dislocations on GaN-on-GaN Schottky diode performance.},
author = {M'Qaddem Z and Maurya V and Rochat N and Jacopin G and Mohamad B and Charles M and Buckley J and El Rammouz H and Cordier Y and Borowik Ł},
year = {2026},
journal = {Nanotechnology},
doi = {10.1088/1361-6528/ae93c1},
url = {https://doi.org/10.1088/1361-6528/ae93c1}
}RIS
TY - JOUR TI - Microscopic impact of isolated and clustered threading dislocations on GaN-on-GaN Schottky diode performance. AU - M'Qaddem Z AU - Maurya V AU - Rochat N AU - Jacopin G AU - Mohamad B AU - Charles M AU - Buckley J AU - El Rammouz H AU - Cordier Y AU - Borowik Ł PY - 2026 JO - Nanotechnology DO - 10.1088/1361-6528/ae93c1 UR - https://doi.org/10.1088/1361-6528/ae93c1 ER -
APA
Z, M., V, M., N, R., G, J., B, M., M, C., J, B., H, E. R., Y, C., & Ł, B. (2026). Microscopic impact of isolated and clustered threading dislocations on GaN-on-GaN Schottky diode performance.. Nanotechnology. https://doi.org/10.1088/1361-6528/ae93c1
Source records
- pubmed · retrieved 2026-09-25T17:24:18.912Z