Microscopic impact of isolated and clustered threading dislocations on GaN-on-GaN Schottky diode performance.

M'Qaddem Z, Maurya V, Rochat N, Jacopin G, Mohamad B, Charles M, Buckley J, El Rammouz H, Cordier Y, Borowik Ł

Open source

DOI
10.1088/1361-6528/ae93c1
Published
2026 Aug 13
Container
Nanotechnology
Publisher
Not recorded
Open access
unknown

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BibTeX

@article{allodium:10.1088/1361-6528/ae93c1,
  title = {Microscopic impact of isolated and clustered threading dislocations on GaN-on-GaN Schottky diode performance.},
  author = {M'Qaddem Z and Maurya V and Rochat N and Jacopin G and Mohamad B and Charles M and Buckley J and El Rammouz H and Cordier Y and Borowik Ł},
  year = {2026},
  journal = {Nanotechnology},
  doi = {10.1088/1361-6528/ae93c1},
  url = {https://doi.org/10.1088/1361-6528/ae93c1}
}

RIS

TY  - JOUR
TI  - Microscopic impact of isolated and clustered threading dislocations on GaN-on-GaN Schottky diode performance.
AU  - M'Qaddem Z
AU  - Maurya V
AU  - Rochat N
AU  - Jacopin G
AU  - Mohamad B
AU  - Charles M
AU  - Buckley J
AU  - El Rammouz H
AU  - Cordier Y
AU  - Borowik Ł
PY  - 2026
JO  - Nanotechnology
DO  - 10.1088/1361-6528/ae93c1
UR  - https://doi.org/10.1088/1361-6528/ae93c1
ER  - 

APA

Z, M., V, M., N, R., G, J., B, M., M, C., J, B., H, E. R., Y, C., & Ł, B. (2026). Microscopic impact of isolated and clustered threading dislocations on GaN-on-GaN Schottky diode performance.. Nanotechnology. https://doi.org/10.1088/1361-6528/ae93c1

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