Optimizing electrical contacts on individual p-i-n GaAs nanowires by site-specific focused ion beam processing.

Holmér J, Zeng L, Olsson E

DOI: 10.1088/1361-6528/ae9d24
Published: 2026 Sep 4
Container: Nanotechnology
Publisher: Not recorded
Open access: unknown

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Cite this work

BibTeX

@article{allodium:10.1088/1361-6528/ae9d24,
  title = {Optimizing electrical contacts on individual p-i-n GaAs nanowires by site-specific focused ion beam processing.},
  author = {Holmér J and Zeng L and Olsson E},
  year = {2026},
  journal = {Nanotechnology},
  doi = {10.1088/1361-6528/ae9d24},
  url = {https://doi.org/10.1088/1361-6528/ae9d24}
}

RIS

TY  - JOUR
TI  - Optimizing electrical contacts on individual p-i-n GaAs nanowires by site-specific focused ion beam processing.
AU  - Holmér J
AU  - Zeng L
AU  - Olsson E
PY  - 2026
JO  - Nanotechnology
DO  - 10.1088/1361-6528/ae9d24
UR  - https://doi.org/10.1088/1361-6528/ae9d24
ER  -

APA

J, H., L, Z., & E, O. (2026). Optimizing electrical contacts on individual p-i-n GaAs nanowires by site-specific focused ion beam processing.. Nanotechnology. https://doi.org/10.1088/1361-6528/ae9d24

Source records

pubmed · retrieved 2026-09-25T20:59:57.075Z