100 nm Gate-Length N-Polar GaN/AlGaN Metal-Oxide-Semiconductor High Electron Mobility Transistor on a Si Substrate via Thin-Layer Transfer Technique.
- DOI
- 10.1088/1361-6528/aea85c
- Published
- 2026 Sep 16
- Container
- Nanotechnology
- Publisher
- Not recorded
- Open access
- unknown
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Cite this work
BibTeX
@article{allodium:10.1088/1361-6528/aea85c,
title = {100 nm Gate-Length N-Polar GaN/AlGaN Metal-Oxide-Semiconductor High Electron Mobility Transistor on a Si Substrate via Thin-Layer Transfer Technique.},
author = {Wei H and Dong G and He J and Wang Z and Xu M and Li Z and Du H and Xing W and Liu Z and Hao Y and Zhang J},
year = {2026},
journal = {Nanotechnology},
doi = {10.1088/1361-6528/aea85c},
url = {https://doi.org/10.1088/1361-6528/aea85c}
}RIS
TY - JOUR TI - 100 nm Gate-Length N-Polar GaN/AlGaN Metal-Oxide-Semiconductor High Electron Mobility Transistor on a Si Substrate via Thin-Layer Transfer Technique. AU - Wei H AU - Dong G AU - He J AU - Wang Z AU - Xu M AU - Li Z AU - Du H AU - Xing W AU - Liu Z AU - Hao Y AU - Zhang J PY - 2026 JO - Nanotechnology DO - 10.1088/1361-6528/aea85c UR - https://doi.org/10.1088/1361-6528/aea85c ER -
APA
H, W., G, D., J, H., Z, W., M, X., Z, L., H, D., W, X., Z, L., Y, H., & J, Z. (2026). 100 nm Gate-Length N-Polar GaN/AlGaN Metal-Oxide-Semiconductor High Electron Mobility Transistor on a Si Substrate via Thin-Layer Transfer Technique.. Nanotechnology. https://doi.org/10.1088/1361-6528/aea85c
Source records
- pubmed · retrieved 2026-09-25T10:52:45.370Z