Breaking the SS-I(on)trade-off in 2D TFETs through an isolated conduction band in monolayer AgSe.

Zhao J, Dong L, Peng B, Zhang F, Hu J

DOI: 10.1088/1361-6528/aeb428
Published: 2026 Oct 23
Container: Nanotechnology
Publisher: Not recorded
Open access: unknown

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Cite this work

BibTeX

@article{allodium:10.1088/1361-6528/aeb428,
  title = {Breaking the SS-I(on)trade-off in 2D TFETs through an isolated conduction band in monolayer AgSe.},
  author = {Zhao J and Dong L and Peng B and Zhang F and Hu J},
  year = {2026},
  journal = {Nanotechnology},
  doi = {10.1088/1361-6528/aeb428},
  url = {https://doi.org/10.1088/1361-6528/aeb428}
}

RIS

TY  - JOUR
TI  - Breaking the SS-I(on)trade-off in 2D TFETs through an isolated conduction band in monolayer AgSe.
AU  - Zhao J
AU  - Dong L
AU  - Peng B
AU  - Zhang F
AU  - Hu J
PY  - 2026
JO  - Nanotechnology
DO  - 10.1088/1361-6528/aeb428
UR  - https://doi.org/10.1088/1361-6528/aeb428
ER  -

APA

J, Z., L, D., B, P., F, Z., & J, H. (2026). Breaking the SS-I(on)trade-off in 2D TFETs through an isolated conduction band in monolayer AgSe.. Nanotechnology. https://doi.org/10.1088/1361-6528/aeb428

Source records

pubmed · retrieved 2026-11-10T10:09:18.331Z