Energy-band alignment of stacked single-crystalline Si/ <i>α</i> -Ga <sub>2</sub> O <sub>3</sub> p–n heterojunctions
- DOI
- 10.1088/1361-6528/aeb80f
- Published
- 2026-11-04
- Container
- Nanotechnology
- Publisher
- IOP Publishing
- Open access
- unknown
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Cite this work
BibTeX
@article{allodium:10.1088/1361-6528/aeb80f,
title = {Energy-band alignment of stacked single-crystalline Si/
<i>α</i>
-Ga
<sub>2</sub>
O
<sub>3</sub>
p–n heterojunctions},
author = {Eungyeol Shin and Yujin Lee and Sola Woo and Jaewon Jang and Kwangeun Kim},
year = {2026},
journal = {Nanotechnology},
doi = {10.1088/1361-6528/aeb80f},
url = {https://doi.org/10.1088/1361-6528/aeb80f}
}RIS
TY - JOUR
TI - Energy-band alignment of stacked single-crystalline Si/
<i>α</i>
-Ga
<sub>2</sub>
O
<sub>3</sub>
p–n heterojunctions
AU - Eungyeol Shin
AU - Yujin Lee
AU - Sola Woo
AU - Jaewon Jang
AU - Kwangeun Kim
PY - 2026
JO - Nanotechnology
DO - 10.1088/1361-6528/aeb80f
UR - https://doi.org/10.1088/1361-6528/aeb80f
ER - APA
Shin, E., Lee, Y., Woo, S., Jang, J., & Kim, K. (2026). Energy-band alignment of stacked single-crystalline Si/ <i>α</i> -Ga <sub>2</sub> O <sub>3</sub> p–n heterojunctions. Nanotechnology. https://doi.org/10.1088/1361-6528/aeb80f
Source records
- crossref · retrieved 2026-11-08T19:46:51.366Z