Thermally intermixed ZnO-rich-to-ITO-rich vertical gradient channels for near-zero-threshold oxide thin-film transistors

Zahid Hassan, Archana T Anilkumar, Praveen Sekhar

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DOI: 10.1088/1361-6528/aeb811
Published: 2026-10-29
Container: Nanotechnology
Publisher: IOP Publishing
Open access: unknown

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Cite this work

BibTeX

@article{allodium:10.1088/1361-6528/aeb811,
  title = {Thermally intermixed ZnO-rich-to-ITO-rich vertical gradient channels for near-zero-threshold oxide thin-film transistors},
  author = {Zahid Hassan and Archana T Anilkumar and Praveen Sekhar},
  year = {2026},
  journal = {Nanotechnology},
  doi = {10.1088/1361-6528/aeb811},
  url = {https://doi.org/10.1088/1361-6528/aeb811}
}

RIS

TY  - JOUR
TI  - Thermally intermixed ZnO-rich-to-ITO-rich vertical gradient channels for near-zero-threshold oxide thin-film transistors
AU  - Zahid Hassan
AU  - Archana T Anilkumar
AU  - Praveen Sekhar
PY  - 2026
JO  - Nanotechnology
DO  - 10.1088/1361-6528/aeb811
UR  - https://doi.org/10.1088/1361-6528/aeb811
ER  -

APA

Hassan, Z., Anilkumar, A. T., & Sekhar, P. (2026). Thermally intermixed ZnO-rich-to-ITO-rich vertical gradient channels for near-zero-threshold oxide thin-film transistors. Nanotechnology. https://doi.org/10.1088/1361-6528/aeb811

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crossref · retrieved 2026-11-08T04:13:20.675Z