RF magnetron sputtering of β-Ga₂O₃ thin films: a critical process-map review of growth regimes, parameter coupling, and conditional process windows.

Hatipoglu I, Güngördü MZ

DOI: 10.1088/1361-6528/aebfa9
Published: 2026 Nov 9
Container: Nanotechnology
Publisher: Not recorded
Open access: unknown

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Cite this work

BibTeX

@article{allodium:10.1088/1361-6528/aebfa9,
  title = {RF magnetron sputtering of β-Ga₂O₃ thin films: a critical process-map review of growth regimes, parameter coupling, and conditional process windows.},
  author = {Hatipoglu I and Güngördü MZ},
  year = {2026},
  journal = {Nanotechnology},
  doi = {10.1088/1361-6528/aebfa9},
  url = {https://doi.org/10.1088/1361-6528/aebfa9}
}

RIS

TY  - JOUR
TI  - RF magnetron sputtering of β-Ga₂O₃ thin films: a critical process-map review of growth regimes, parameter coupling, and conditional process windows.
AU  - Hatipoglu I
AU  - Güngördü MZ
PY  - 2026
JO  - Nanotechnology
DO  - 10.1088/1361-6528/aebfa9
UR  - https://doi.org/10.1088/1361-6528/aebfa9
ER  -

APA

I, H., & MZ, G. (2026). RF magnetron sputtering of β-Ga₂O₃ thin films: a critical process-map review of growth regimes, parameter coupling, and conditional process windows.. Nanotechnology. https://doi.org/10.1088/1361-6528/aebfa9

Source records

pubmed · retrieved 2026-11-10T09:38:27.813Z