A review of selected topics in physics based modeling for tunnel field-effect transistors
- DOI
- 10.1088/1361-6641/aa6fca
- Published
- 2017-07-11
- Container
- Semiconductor Science and Technology
- Publisher
- IOP Publishing
- Open access
- unknown
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Cite this work
BibTeX
@article{allodium:10.1088/1361-6641/aa6fca,
title = {A review of selected topics in physics based modeling for tunnel field-effect transistors},
author = {David Esseni and Marco Pala and Pierpaolo Palestri and Cem Alper and Tommaso Rollo},
year = {2017},
journal = {Semiconductor Science and Technology},
doi = {10.1088/1361-6641/aa6fca},
url = {https://doi.org/10.1088/1361-6641/aa6fca}
}RIS
TY - JOUR TI - A review of selected topics in physics based modeling for tunnel field-effect transistors AU - David Esseni AU - Marco Pala AU - Pierpaolo Palestri AU - Cem Alper AU - Tommaso Rollo PY - 2017 JO - Semiconductor Science and Technology DO - 10.1088/1361-6641/aa6fca UR - https://doi.org/10.1088/1361-6641/aa6fca ER -
APA
Esseni, D., Pala, M., Palestri, P., Alper, C., & Rollo, T. (2017). A review of selected topics in physics based modeling for tunnel field-effect transistors. Semiconductor Science and Technology. https://doi.org/10.1088/1361-6641/aa6fca
Source records
- crossref · retrieved 2026-09-25T15:36:10.124Z