Screening of metal flux for SiC solution growth by a thin-film combinatorial method.

Yonezawa Y, Ryo M, Takigawa A, Matsumoto Y

DOI: 10.1088/1468-6996/12/5/054209
Published: 2011 Oct
Container: Science and technology of advanced materials
Publisher: Not recorded
Open access: yes

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Cite this work

BibTeX

@article{allodium:10.1088/1468-6996/12/5/054209,
  title = {Screening of metal flux for SiC solution growth by a thin-film combinatorial method.},
  author = {Yonezawa Y and Ryo M and Takigawa A and Matsumoto Y},
  year = {2011},
  journal = {Science and technology of advanced materials},
  doi = {10.1088/1468-6996/12/5/054209},
  url = {https://doi.org/10.1088/1468-6996/12/5/054209}
}

RIS

TY  - JOUR
TI  - Screening of metal flux for SiC solution growth by a thin-film combinatorial method.
AU  - Yonezawa Y
AU  - Ryo M
AU  - Takigawa A
AU  - Matsumoto Y
PY  - 2011
JO  - Science and technology of advanced materials
DO  - 10.1088/1468-6996/12/5/054209
UR  - https://doi.org/10.1088/1468-6996/12/5/054209
ER  -

APA

Y, Y., M, R., A, T., & Y, M. (2011). Screening of metal flux for SiC solution growth by a thin-film combinatorial method.. Science and technology of advanced materials. https://doi.org/10.1088/1468-6996/12/5/054209

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pubmed · retrieved 2026-09-27T16:48:49.551Z