Intrinsic stability of ferroelectric and piezoelectric properties of epitaxial PbZr(0.45)Ti(0.55)O(3) thin films on silicon in relation to grain tilt.

Houwman EP, Nguyen MD, Dekkers M, Rijnders G

Open source

DOI
10.1088/1468-6996/14/4/045006
Published
2013 Aug
Container
Science and technology of advanced materials
Publisher
Not recorded
Open access
yes

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BibTeX

@article{allodium:10.1088/1468-6996/14/4/045006,
  title = {Intrinsic stability of ferroelectric and piezoelectric properties of epitaxial PbZr(0.45)Ti(0.55)O(3) thin films on silicon in relation to grain tilt.},
  author = {Houwman EP and Nguyen MD and Dekkers M and Rijnders G},
  year = {2013},
  journal = {Science and technology of advanced materials},
  doi = {10.1088/1468-6996/14/4/045006},
  url = {https://doi.org/10.1088/1468-6996/14/4/045006}
}

RIS

TY  - JOUR
TI  - Intrinsic stability of ferroelectric and piezoelectric properties of epitaxial PbZr(0.45)Ti(0.55)O(3) thin films on silicon in relation to grain tilt.
AU  - Houwman EP
AU  - Nguyen MD
AU  - Dekkers M
AU  - Rijnders G
PY  - 2013
JO  - Science and technology of advanced materials
DO  - 10.1088/1468-6996/14/4/045006
UR  - https://doi.org/10.1088/1468-6996/14/4/045006
ER  - 

APA

EP, H., MD, N., M, D., & G, R. (2013). Intrinsic stability of ferroelectric and piezoelectric properties of epitaxial PbZr(0.45)Ti(0.55)O(3) thin films on silicon in relation to grain tilt.. Science and technology of advanced materials. https://doi.org/10.1088/1468-6996/14/4/045006

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