Intrinsic stability of ferroelectric and piezoelectric properties of epitaxial PbZr(0.45)Ti(0.55)O(3) thin films on silicon in relation to grain tilt.
- DOI
- 10.1088/1468-6996/14/4/045006
- Published
- 2013 Aug
- Container
- Science and technology of advanced materials
- Publisher
- Not recorded
- Open access
- yes
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Cite this work
BibTeX
@article{allodium:10.1088/1468-6996/14/4/045006,
title = {Intrinsic stability of ferroelectric and piezoelectric properties of epitaxial PbZr(0.45)Ti(0.55)O(3) thin films on silicon in relation to grain tilt.},
author = {Houwman EP and Nguyen MD and Dekkers M and Rijnders G},
year = {2013},
journal = {Science and technology of advanced materials},
doi = {10.1088/1468-6996/14/4/045006},
url = {https://doi.org/10.1088/1468-6996/14/4/045006}
}RIS
TY - JOUR TI - Intrinsic stability of ferroelectric and piezoelectric properties of epitaxial PbZr(0.45)Ti(0.55)O(3) thin films on silicon in relation to grain tilt. AU - Houwman EP AU - Nguyen MD AU - Dekkers M AU - Rijnders G PY - 2013 JO - Science and technology of advanced materials DO - 10.1088/1468-6996/14/4/045006 UR - https://doi.org/10.1088/1468-6996/14/4/045006 ER -
APA
EP, H., MD, N., M, D., & G, R. (2013). Intrinsic stability of ferroelectric and piezoelectric properties of epitaxial PbZr(0.45)Ti(0.55)O(3) thin films on silicon in relation to grain tilt.. Science and technology of advanced materials. https://doi.org/10.1088/1468-6996/14/4/045006
Source records
- pubmed · retrieved 2026-09-26T00:54:14.324Z
- europe-pmc · retrieved 2026-09-26T00:54:14.339Z
- doaj · retrieved 2026-09-26T00:54:14.366Z