Evaluation of radiation hardness of High-Voltage silicon vertical JFETs

G. Giacomini, M. Bomben, W. Chen, D. Lynn

Open source

DOI
10.1088/1748-0221/15/11/t11001
Published
2020-11-02
Container
Journal of Instrumentation
Publisher
IOP Publishing
Open access
unknown

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BibTeX

@article{allodium:10.1088/1748-0221/15/11/t11001,
  title = {Evaluation of radiation hardness of High-Voltage silicon vertical JFETs},
  author = {G. Giacomini and M. Bomben and W. Chen and D. Lynn},
  year = {2020},
  journal = {Journal of Instrumentation},
  doi = {10.1088/1748-0221/15/11/t11001},
  url = {https://doi.org/10.1088/1748-0221/15/11/t11001}
}

RIS

TY  - JOUR
TI  - Evaluation of radiation hardness of High-Voltage silicon vertical JFETs
AU  - G. Giacomini
AU  - M. Bomben
AU  - W. Chen
AU  - D. Lynn
PY  - 2020
JO  - Journal of Instrumentation
DO  - 10.1088/1748-0221/15/11/t11001
UR  - https://doi.org/10.1088/1748-0221/15/11/t11001
ER  - 

APA

Giacomini, G., Bomben, M., Chen, W., & Lynn, D. (2020). Evaluation of radiation hardness of High-Voltage silicon vertical JFETs. Journal of Instrumentation. https://doi.org/10.1088/1748-0221/15/11/t11001

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