In-situ biasing DPC STEM observation of GaAs p-n junction.

Toyama S, Kojima Y, Oyaizu A, Sasaki H, Seki T, Shibata N

DOI: 10.1093/jmicro/dfag026
Published: 2026 May 21
Container: Microscopy (Oxford, England)
Publisher: Not recorded
Open access: unknown

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Cite this work

BibTeX

@article{allodium:10.1093/jmicro/dfag026,
  title = {In-situ biasing DPC STEM observation of GaAs p-n junction.},
  author = {Toyama S and Kojima Y and Oyaizu A and Sasaki H and Seki T and Shibata N},
  year = {2026},
  journal = {Microscopy (Oxford, England)},
  doi = {10.1093/jmicro/dfag026},
  url = {https://doi.org/10.1093/jmicro/dfag026}
}

RIS

TY  - JOUR
TI  - In-situ biasing DPC STEM observation of GaAs p-n junction.
AU  - Toyama S
AU  - Kojima Y
AU  - Oyaizu A
AU  - Sasaki H
AU  - Seki T
AU  - Shibata N
PY  - 2026
JO  - Microscopy (Oxford, England)
DO  - 10.1093/jmicro/dfag026
UR  - https://doi.org/10.1093/jmicro/dfag026
ER  -

APA

S, T., Y, K., A, O., H, S., T, S., & N, S. (2026). In-situ biasing DPC STEM observation of GaAs p-n junction.. Microscopy (Oxford, England). https://doi.org/10.1093/jmicro/dfag026

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pubmed · retrieved 2026-09-26T22:28:38.849Z