Atomistic tight-binding Hartree-Fock calculations of multielectron configurations in P-doped silicon devices: Wavefunction reshaping.

Ochoa MA, Liu K, Różański P, Zieliński M, Bryant GW

DOI: 10.1103/14lg-249q
Published: 2025 Aug 28
Container: Physical review. B
Publisher: Not recorded
Open access: yes

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Cite this work

BibTeX

@article{allodium:10.1103/14lg-249q,
  title = {Atomistic tight-binding Hartree-Fock calculations of multielectron configurations in P-doped silicon devices: Wavefunction reshaping.},
  author = {Ochoa MA and Liu K and Różański P and Zieliński M and Bryant GW},
  year = {2025},
  journal = {Physical review. B},
  doi = {10.1103/14lg-249q},
  url = {https://doi.org/10.1103/14lg-249q}
}

RIS

TY  - JOUR
TI  - Atomistic tight-binding Hartree-Fock calculations of multielectron configurations in P-doped silicon devices: Wavefunction reshaping.
AU  - Ochoa MA
AU  - Liu K
AU  - Różański P
AU  - Zieliński M
AU  - Bryant GW
PY  - 2025
JO  - Physical review. B
DO  - 10.1103/14lg-249q
UR  - https://doi.org/10.1103/14lg-249q
ER  -

APA

MA, O., K, L., P, R., M, Z., & GW, B. (2025). Atomistic tight-binding Hartree-Fock calculations of multielectron configurations in P-doped silicon devices: Wavefunction reshaping.. Physical review. B. https://doi.org/10.1103/14lg-249q

Source records

pubmed · retrieved 2026-09-27T10:28:40.825Z