Conditional Dispersive Readout of a CMOS Single-Electron Memory Cell

S. Schaal, S. Barraud, J. J. L. Morton, M. F. Gonzalez-Zalba

Open source

DOI: 10.1103/physrevapplied.9.054016
Published: 2018-05-10
Container: Physical Review Applied
Publisher: American Physical Society (APS)
Open access: unknown

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Cite this work

BibTeX

@article{allodium:10.1103/physrevapplied.9.054016,
  title = {Conditional Dispersive Readout of a CMOS Single-Electron Memory Cell},
  author = {S. Schaal and S. Barraud and J. J. L. Morton and M. F. Gonzalez-Zalba},
  year = {2018},
  journal = {Physical Review Applied},
  doi = {10.1103/physrevapplied.9.054016},
  url = {https://doi.org/10.1103/physrevapplied.9.054016}
}

RIS

TY  - JOUR
TI  - Conditional Dispersive Readout of a CMOS Single-Electron Memory Cell
AU  - S. Schaal
AU  - S. Barraud
AU  - J. J. L. Morton
AU  - M. F. Gonzalez-Zalba
PY  - 2018
JO  - Physical Review Applied
DO  - 10.1103/physrevapplied.9.054016
UR  - https://doi.org/10.1103/physrevapplied.9.054016
ER  -

APA

Schaal, S., Barraud, S., Morton, J. J. L., & Gonzalez-Zalba, M. F. (2018). Conditional Dispersive Readout of a CMOS Single-Electron Memory Cell. Physical Review Applied. https://doi.org/10.1103/physrevapplied.9.054016

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crossref · retrieved 2026-09-25T09:18:51.727Z