Highly Efficient Spin-to-Charge Current Conversion in Strained HgTe Surface States Protected by a HgCdTe Layer.
- DOI
- 10.1103/physrevlett.120.167201
- Published
- 2018 Apr 20
- Container
- Physical review letters
- Publisher
- Not recorded
- Open access
- unknown
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Cite this work
BibTeX
@article{allodium:10.1103/physrevlett.120.167201,
title = {Highly Efficient Spin-to-Charge Current Conversion in Strained HgTe Surface States Protected by a HgCdTe Layer.},
author = {Noel P and Thomas C and Fu Y and Vila L and Haas B and Jouneau PH and Gambarelli S and Meunier T and Ballet P and Attané JP},
year = {2018},
journal = {Physical review letters},
doi = {10.1103/physrevlett.120.167201},
url = {https://doi.org/10.1103/physrevlett.120.167201}
}RIS
TY - JOUR TI - Highly Efficient Spin-to-Charge Current Conversion in Strained HgTe Surface States Protected by a HgCdTe Layer. AU - Noel P AU - Thomas C AU - Fu Y AU - Vila L AU - Haas B AU - Jouneau PH AU - Gambarelli S AU - Meunier T AU - Ballet P AU - Attané JP PY - 2018 JO - Physical review letters DO - 10.1103/physrevlett.120.167201 UR - https://doi.org/10.1103/physrevlett.120.167201 ER -
APA
P, N., C, T., Y, F., L, V., B, H., PH, J., S, G., T, M., P, B., & JP, A. (2018). Highly Efficient Spin-to-Charge Current Conversion in Strained HgTe Surface States Protected by a HgCdTe Layer.. Physical review letters. https://doi.org/10.1103/physrevlett.120.167201
Source records
- pubmed · retrieved 2026-09-26T22:35:59.753Z