Highly Efficient Spin-to-Charge Current Conversion in Strained HgTe Surface States Protected by a HgCdTe Layer.

Noel P, Thomas C, Fu Y, Vila L, Haas B, Jouneau PH, Gambarelli S, Meunier T, Ballet P, Attané JP

Open source

DOI
10.1103/physrevlett.120.167201
Published
2018 Apr 20
Container
Physical review letters
Publisher
Not recorded
Open access
unknown

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BibTeX

@article{allodium:10.1103/physrevlett.120.167201,
  title = {Highly Efficient Spin-to-Charge Current Conversion in Strained HgTe Surface States Protected by a HgCdTe Layer.},
  author = {Noel P and Thomas C and Fu Y and Vila L and Haas B and Jouneau PH and Gambarelli S and Meunier T and Ballet P and Attané JP},
  year = {2018},
  journal = {Physical review letters},
  doi = {10.1103/physrevlett.120.167201},
  url = {https://doi.org/10.1103/physrevlett.120.167201}
}

RIS

TY  - JOUR
TI  - Highly Efficient Spin-to-Charge Current Conversion in Strained HgTe Surface States Protected by a HgCdTe Layer.
AU  - Noel P
AU  - Thomas C
AU  - Fu Y
AU  - Vila L
AU  - Haas B
AU  - Jouneau PH
AU  - Gambarelli S
AU  - Meunier T
AU  - Ballet P
AU  - Attané JP
PY  - 2018
JO  - Physical review letters
DO  - 10.1103/physrevlett.120.167201
UR  - https://doi.org/10.1103/physrevlett.120.167201
ER  - 

APA

P, N., C, T., Y, F., L, V., B, H., PH, J., S, G., T, M., P, B., & JP, A. (2018). Highly Efficient Spin-to-Charge Current Conversion in Strained HgTe Surface States Protected by a HgCdTe Layer.. Physical review letters. https://doi.org/10.1103/physrevlett.120.167201

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