Black-Silicon Ultraviolet Photodiodes Achieve External Quantum Efficiency above 130.

Garin M, Heinonen J, Werner L, Pasanen TP, Vähänissi V, Haarahiltunen A, Juntunen MA, Savin H

DOI: 10.1103/physrevlett.125.117702
Published: 2020 Sep 11
Container: Physical review letters
Publisher: Not recorded
Open access: no

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Cite this work

BibTeX

@article{allodium:10.1103/physrevlett.125.117702,
  title = {Black-Silicon Ultraviolet Photodiodes Achieve External Quantum Efficiency above 130.},
  author = {Garin M and Heinonen J and Werner L and Pasanen TP and Vähänissi V and Haarahiltunen A and Juntunen MA and Savin H},
  year = {2020},
  journal = {Physical review letters},
  doi = {10.1103/physrevlett.125.117702},
  url = {https://doi.org/10.1103/physrevlett.125.117702}
}

RIS

TY  - JOUR
TI  - Black-Silicon Ultraviolet Photodiodes Achieve External Quantum Efficiency above 130.
AU  - Garin M
AU  - Heinonen J
AU  - Werner L
AU  - Pasanen TP
AU  - Vähänissi V
AU  - Haarahiltunen A
AU  - Juntunen MA
AU  - Savin H
PY  - 2020
JO  - Physical review letters
DO  - 10.1103/physrevlett.125.117702
UR  - https://doi.org/10.1103/physrevlett.125.117702
ER  -

APA

M, G., J, H., L, W., TP, P., V, V., A, H., MA, J., & H, S. (2020). Black-Silicon Ultraviolet Photodiodes Achieve External Quantum Efficiency above 130.. Physical review letters. https://doi.org/10.1103/physrevlett.125.117702

Source records

pubmed · retrieved 2026-09-26T05:59:32.966Z
europe-pmc · retrieved 2026-09-26T05:59:32.987Z