Nanowire Transistors with Bound-Charge Engineering

Raphaël J. Prentki, Mohammed Harb, Lei Liu, Hong Guo

Open source

DOI: 10.1103/physrevlett.125.247704
Published: 2020-12-08
Container: Physical Review Letters
Publisher: American Physical Society (APS)
Open access: unknown

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Cite this work

BibTeX

@article{allodium:10.1103/physrevlett.125.247704,
  title = {Nanowire Transistors with Bound-Charge Engineering},
  author = {Raphaël J. Prentki and Mohammed Harb and Lei Liu and Hong Guo},
  year = {2020},
  journal = {Physical Review Letters},
  doi = {10.1103/physrevlett.125.247704},
  url = {https://doi.org/10.1103/physrevlett.125.247704}
}

RIS

TY  - JOUR
TI  - Nanowire Transistors with Bound-Charge Engineering
AU  - Raphaël J. Prentki
AU  - Mohammed Harb
AU  - Lei Liu
AU  - Hong Guo
PY  - 2020
JO  - Physical Review Letters
DO  - 10.1103/physrevlett.125.247704
UR  - https://doi.org/10.1103/physrevlett.125.247704
ER  -

APA

Prentki, R. J., Harb, M., Liu, L., & Guo, H. (2020). Nanowire Transistors with Bound-Charge Engineering. Physical Review Letters. https://doi.org/10.1103/physrevlett.125.247704

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crossref · retrieved 2026-09-25T16:23:36.802Z