Demonstration of Robust Chiral Edge Transport in Field-Induced Chern Insulator MnBi_{2}Te_{4} Devices with Engineered Geometric Defects.
- DOI
- 10.1103/tv3l-85d1
- Published
- 2026 Oct 9
- Container
- Physical review letters
- Publisher
- arXiv
- Open access
- yes
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Cite this work
BibTeX
@article{allodium:10.1103/tv3l-85d1,
title = {Demonstration of Robust Chiral Edge Transport in Field-Induced Chern Insulator MnBi\_\{2\}Te\_\{4\} Devices with Engineered Geometric Defects.},
author = {Wang P and Ge J and Luo J and Liu X and Yang J and Fei F and Song F and Wang J},
year = {2026},
journal = {Physical review letters},
doi = {10.1103/tv3l-85d1},
url = {https://doi.org/10.1103/tv3l-85d1}
}RIS
TY - JOUR
TI - Demonstration of Robust Chiral Edge Transport in Field-Induced Chern Insulator MnBi_{2}Te_{4} Devices with Engineered Geometric Defects.
AU - Wang P
AU - Ge J
AU - Luo J
AU - Liu X
AU - Yang J
AU - Fei F
AU - Song F
AU - Wang J
PY - 2026
JO - Physical review letters
DO - 10.1103/tv3l-85d1
UR - https://doi.org/10.1103/tv3l-85d1
ER - APA
P, W., J, G., J, L., X, L., J, Y., F, F., F, S., & J, W. (2026). Demonstration of Robust Chiral Edge Transport in Field-Induced Chern Insulator MnBi_{2}Te_{4} Devices with Engineered Geometric Defects.. Physical review letters. https://doi.org/10.1103/tv3l-85d1