A new method for characterizing the spatial distributions of interface states and oxide-trapped charges in LDD n-MOSFETs
- DOI
- 10.1109/16.477596
- Published
- 1996
- Container
- IEEE Transactions on Electron Devices
- Publisher
- Institute of Electrical and Electronics Engineers (IEEE)
- Open access
- unknown
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Cite this work
BibTeX
@article{allodium:10.1109/16.477596,
title = {A new method for characterizing the spatial distributions of interface states and oxide-trapped charges in LDD n-MOSFETs},
author = {R.G.-H. Lee and Jen-Shien Su and S.S. Chung},
year = {1996},
journal = {IEEE Transactions on Electron Devices},
doi = {10.1109/16.477596},
url = {https://doi.org/10.1109/16.477596}
}RIS
TY - JOUR TI - A new method for characterizing the spatial distributions of interface states and oxide-trapped charges in LDD n-MOSFETs AU - R.G.-H. Lee AU - Jen-Shien Su AU - S.S. Chung PY - 1996 JO - IEEE Transactions on Electron Devices DO - 10.1109/16.477596 UR - https://doi.org/10.1109/16.477596 ER -
APA
Lee, R., Su, J., & Chung, S. (1996). A new method for characterizing the spatial distributions of interface states and oxide-trapped charges in LDD n-MOSFETs. IEEE Transactions on Electron Devices. https://doi.org/10.1109/16.477596
Source records
- crossref · retrieved 2026-09-25T00:31:07.404Z