Effects of inelastic scattering on interband tunneling in GaSb/AlSb/InAs/GaSb/AlSb/lnAs broken-gap interband tunneling structures
- DOI
- 10.1109/16.678518
- Published
- 1998-06
- Container
- IEEE Transactions on Electron Devices
- Publisher
- Institute of Electrical and Electronics Engineers (IEEE)
- Open access
- unknown
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Cite this work
BibTeX
@article{allodium:10.1109/16.678518,
title = {Effects of inelastic scattering on interband tunneling in GaSb/AlSb/InAs/GaSb/AlSb/lnAs broken-gap interband tunneling structures},
author = {Meng Hwang Liu and Yeong Her Wang and Mau Phon Houng},
year = {1998},
journal = {IEEE Transactions on Electron Devices},
doi = {10.1109/16.678518},
url = {https://doi.org/10.1109/16.678518}
}RIS
TY - JOUR TI - Effects of inelastic scattering on interband tunneling in GaSb/AlSb/InAs/GaSb/AlSb/lnAs broken-gap interband tunneling structures AU - Meng Hwang Liu AU - Yeong Her Wang AU - Mau Phon Houng PY - 1998 JO - IEEE Transactions on Electron Devices DO - 10.1109/16.678518 UR - https://doi.org/10.1109/16.678518 ER -
APA
Liu, M. H., Wang, Y. H., & Houng, M. P. (1998). Effects of inelastic scattering on interband tunneling in GaSb/AlSb/InAs/GaSb/AlSb/lnAs broken-gap interband tunneling structures. IEEE Transactions on Electron Devices. https://doi.org/10.1109/16.678518
Source records
- crossref · retrieved 2026-09-25T07:33:25.456Z