A novel fabrication process of a silicon field emitter array with thermal oxide as a gate insulator

Hyung Soo Uh, Sang Jik Kwon, Jong Duk Lee

Open source

DOI
10.1109/55.468276
Published
1995-11
Container
IEEE Electron Device Letters
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Open access
unknown

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BibTeX

@article{allodium:10.1109/55.468276,
  title = {A novel fabrication process of a silicon field emitter array with thermal oxide as a gate insulator},
  author = {Hyung Soo Uh and Sang Jik Kwon and Jong Duk Lee},
  year = {1995},
  journal = {IEEE Electron Device Letters},
  doi = {10.1109/55.468276},
  url = {https://doi.org/10.1109/55.468276}
}

RIS

TY  - JOUR
TI  - A novel fabrication process of a silicon field emitter array with thermal oxide as a gate insulator
AU  - Hyung Soo Uh
AU  - Sang Jik Kwon
AU  - Jong Duk Lee
PY  - 1995
JO  - IEEE Electron Device Letters
DO  - 10.1109/55.468276
UR  - https://doi.org/10.1109/55.468276
ER  -

APA

Uh, H. S., Kwon, S. J., & Lee, J. D. (1995). A novel fabrication process of a silicon field emitter array with thermal oxide as a gate insulator. IEEE Electron Device Letters. https://doi.org/10.1109/55.468276

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