JVD silicon nitride as tunnel dielectric in p-channel flash memory
- DOI
- 10.1109/55.981316
- Published
- 2002-02
- Container
- IEEE Electron Device Letters
- Publisher
- Institute of Electrical and Electronics Engineers (IEEE)
- Open access
- unknown
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Cite this work
BibTeX
@article{allodium:10.1109/55.981316,
title = {JVD silicon nitride as tunnel dielectric in p-channel flash memory},
author = {Min She and Tsu-Jae King and Chenming Hu and Wenjuan Zhu and Zhijiong Luo and Jin-Ping Han and Tso-Ping Ma},
year = {2002},
journal = {IEEE Electron Device Letters},
doi = {10.1109/55.981316},
url = {https://doi.org/10.1109/55.981316}
}RIS
TY - JOUR TI - JVD silicon nitride as tunnel dielectric in p-channel flash memory AU - Min She AU - Tsu-Jae King AU - Chenming Hu AU - Wenjuan Zhu AU - Zhijiong Luo AU - Jin-Ping Han AU - Tso-Ping Ma PY - 2002 JO - IEEE Electron Device Letters DO - 10.1109/55.981316 UR - https://doi.org/10.1109/55.981316 ER -
APA
She, M., King, T., Hu, C., Zhu, W., Luo, Z., Han, J., & Ma, T. (2002). JVD silicon nitride as tunnel dielectric in p-channel flash memory. IEEE Electron Device Letters. https://doi.org/10.1109/55.981316
Source records
- crossref · retrieved 2026-09-27T02:40:19.652Z