Analysis of Single-Event Transient in Tunneling-Based Ternary CMOS With Gate-All-Around Structure

Hyeong-Chan Son, Hyunwoo Kim

Open source

DOI
10.1109/access.2024.3471809
Published
2024
Container
IEEE Access
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Open access
unknown

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BibTeX

@article{allodium:10.1109/access.2024.3471809,
  title = {Analysis of Single-Event Transient in Tunneling-Based Ternary CMOS With Gate-All-Around Structure},
  author = {Hyeong-Chan Son and Hyunwoo Kim},
  year = {2024},
  journal = {IEEE Access},
  doi = {10.1109/access.2024.3471809},
  url = {https://doi.org/10.1109/access.2024.3471809}
}

RIS

TY  - JOUR
TI  - Analysis of Single-Event Transient in Tunneling-Based Ternary CMOS With Gate-All-Around Structure
AU  - Hyeong-Chan Son
AU  - Hyunwoo Kim
PY  - 2024
JO  - IEEE Access
DO  - 10.1109/access.2024.3471809
UR  - https://doi.org/10.1109/access.2024.3471809
ER  - 

APA

Son, H., & Kim, H. (2024). Analysis of Single-Event Transient in Tunneling-Based Ternary CMOS With Gate-All-Around Structure. IEEE Access. https://doi.org/10.1109/access.2024.3471809

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