Reliability Issues and Degradation Mechanisms of p-GaN Gated E-Mode AlGaN/GaN Power HEMTs: A Critical Review
- DOI
- 10.1109/access.2025.3569288
- Published
- 2025
- Container
- IEEE Access
- Publisher
- Institute of Electrical and Electronics Engineers (IEEE)
- Open access
- unknown
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Cite this work
BibTeX
@article{allodium:10.1109/access.2025.3569288,
title = {Reliability Issues and Degradation Mechanisms of p-GaN Gated E-Mode AlGaN/GaN Power HEMTs: A Critical Review},
author = {J. Ajayan and Asisa Kumar Panigrahy and Sachidananda Sen and Maneesh Kumar and Shubham Tayal},
year = {2025},
journal = {IEEE Access},
doi = {10.1109/access.2025.3569288},
url = {https://doi.org/10.1109/access.2025.3569288}
}RIS
TY - JOUR TI - Reliability Issues and Degradation Mechanisms of p-GaN Gated E-Mode AlGaN/GaN Power HEMTs: A Critical Review AU - J. Ajayan AU - Asisa Kumar Panigrahy AU - Sachidananda Sen AU - Maneesh Kumar AU - Shubham Tayal PY - 2025 JO - IEEE Access DO - 10.1109/access.2025.3569288 UR - https://doi.org/10.1109/access.2025.3569288 ER -
APA
Ajayan, J., Panigrahy, A. K., Sen, S., Kumar, M., & Tayal, S. (2025). Reliability Issues and Degradation Mechanisms of p-GaN Gated E-Mode AlGaN/GaN Power HEMTs: A Critical Review. IEEE Access. https://doi.org/10.1109/access.2025.3569288
Source records
- crossref · retrieved 2026-11-10T08:39:06.299Z