Role of the gate-to-drain distance in the performance of the normally-off InAlN/GaN HEMTs
- DOI
- 10.1109/asdam.2010.5666325
- Published
- 2010-10
- Container
- The Eighth International Conference on Advanced Semiconductor Devices and Microsystems
- Publisher
- IEEE
- Open access
- unknown
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Cite this work
BibTeX
@article{allodium:10.1109/asdam.2010.5666325,
title = {Role of the gate-to-drain distance in the performance of the normally-off InAlN/GaN HEMTs},
author = {J. Kuzmik and Ostermaier and G. Pozzovivo and B. Basnar and W. Schrenk and J.-F. Carlin and M. Gonschorek and E. Feltin and N. Grandjean and Y. Douvry and Ch. Gaquiere and J.-C. De Jaeger and G. Strasser and D. Pogany and E. Gornik},
year = {2010},
journal = {The Eighth International Conference on Advanced Semiconductor Devices and Microsystems},
doi = {10.1109/asdam.2010.5666325},
url = {https://doi.org/10.1109/asdam.2010.5666325}
}RIS
TY - JOUR TI - Role of the gate-to-drain distance in the performance of the normally-off InAlN/GaN HEMTs AU - J. Kuzmik AU - Ostermaier AU - G. Pozzovivo AU - B. Basnar AU - W. Schrenk AU - J.-F. Carlin AU - M. Gonschorek AU - E. Feltin AU - N. Grandjean AU - Y. Douvry AU - Ch. Gaquiere AU - J.-C. De Jaeger AU - G. Strasser AU - D. Pogany AU - E. Gornik PY - 2010 JO - The Eighth International Conference on Advanced Semiconductor Devices and Microsystems DO - 10.1109/asdam.2010.5666325 UR - https://doi.org/10.1109/asdam.2010.5666325 ER -
APA
Kuzmik, J., Ostermaier, Pozzovivo, G., Basnar, B., Schrenk, W., Carlin, J., Gonschorek, M., Feltin, E., Grandjean, N., Douvry, Y., Gaquiere, C., Jaeger, J. D., Strasser, G., Pogany, D., & Gornik, E. (2010). Role of the gate-to-drain distance in the performance of the normally-off InAlN/GaN HEMTs. The Eighth International Conference on Advanced Semiconductor Devices and Microsystems. https://doi.org/10.1109/asdam.2010.5666325
Source records
- crossref · retrieved 2026-09-25T16:42:39.827Z