100mV noise performances of Te-doped Sb-HEMT

A. Noudeviwa, A. Olivier, Y. Roelens, F. Danneville, N. Wichmann, N. Waldhoff, L. Desplanque, X. Wallart, S. Bollaert

Open source

DOI
10.1109/asdam.2010.5667012
Published
2010-10
Container
The Eighth International Conference on Advanced Semiconductor Devices and Microsystems
Publisher
IEEE
Open access
unknown

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BibTeX

@article{allodium:10.1109/asdam.2010.5667012,
  title = {100mV noise performances of Te-doped Sb-HEMT},
  author = {A. Noudeviwa and A. Olivier and Y. Roelens and F. Danneville and N. Wichmann and N. Waldhoff and L. Desplanque and X. Wallart and S. Bollaert},
  year = {2010},
  journal = {The Eighth International Conference on Advanced Semiconductor Devices and Microsystems},
  doi = {10.1109/asdam.2010.5667012},
  url = {https://doi.org/10.1109/asdam.2010.5667012}
}

RIS

TY  - JOUR
TI  - 100mV noise performances of Te-doped Sb-HEMT
AU  - A. Noudeviwa
AU  - A. Olivier
AU  - Y. Roelens
AU  - F. Danneville
AU  - N. Wichmann
AU  - N. Waldhoff
AU  - L. Desplanque
AU  - X. Wallart
AU  - S. Bollaert
PY  - 2010
JO  - The Eighth International Conference on Advanced Semiconductor Devices and Microsystems
DO  - 10.1109/asdam.2010.5667012
UR  - https://doi.org/10.1109/asdam.2010.5667012
ER  - 

APA

Noudeviwa, A., Olivier, A., Roelens, Y., Danneville, F., Wichmann, N., Waldhoff, N., Desplanque, L., Wallart, X., & Bollaert, S. (2010). 100mV noise performances of Te-doped Sb-HEMT. The Eighth International Conference on Advanced Semiconductor Devices and Microsystems. https://doi.org/10.1109/asdam.2010.5667012

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