100mV noise performances of Te-doped Sb-HEMT
- DOI
- 10.1109/asdam.2010.5667012
- Published
- 2010-10
- Container
- The Eighth International Conference on Advanced Semiconductor Devices and Microsystems
- Publisher
- IEEE
- Open access
- unknown
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Cite this work
BibTeX
@article{allodium:10.1109/asdam.2010.5667012,
title = {100mV noise performances of Te-doped Sb-HEMT},
author = {A. Noudeviwa and A. Olivier and Y. Roelens and F. Danneville and N. Wichmann and N. Waldhoff and L. Desplanque and X. Wallart and S. Bollaert},
year = {2010},
journal = {The Eighth International Conference on Advanced Semiconductor Devices and Microsystems},
doi = {10.1109/asdam.2010.5667012},
url = {https://doi.org/10.1109/asdam.2010.5667012}
}RIS
TY - JOUR TI - 100mV noise performances of Te-doped Sb-HEMT AU - A. Noudeviwa AU - A. Olivier AU - Y. Roelens AU - F. Danneville AU - N. Wichmann AU - N. Waldhoff AU - L. Desplanque AU - X. Wallart AU - S. Bollaert PY - 2010 JO - The Eighth International Conference on Advanced Semiconductor Devices and Microsystems DO - 10.1109/asdam.2010.5667012 UR - https://doi.org/10.1109/asdam.2010.5667012 ER -
APA
Noudeviwa, A., Olivier, A., Roelens, Y., Danneville, F., Wichmann, N., Waldhoff, N., Desplanque, L., Wallart, X., & Bollaert, S. (2010). 100mV noise performances of Te-doped Sb-HEMT. The Eighth International Conference on Advanced Semiconductor Devices and Microsystems. https://doi.org/10.1109/asdam.2010.5667012
Source records
- crossref · retrieved 2026-09-25T15:40:24.191Z