Investigation of Photoluminescence Voltage PL-V Measurement: Correlation to Capacitance Voltage C-V for Si/Dielectric Interface Characterization
- DOI
- 10.1109/asmc49169.2020.9185305
- Published
- 2020-08
- Container
- 2020 31st Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC)
- Publisher
- IEEE
- Open access
- unknown
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Cite this work
BibTeX
@article{allodium:10.1109/asmc49169.2020.9185305,
title = {Investigation of Photoluminescence Voltage PL-V Measurement: Correlation to Capacitance Voltage C-V for Si/Dielectric Interface Characterization},
author = {Thomas Nassiet and Romain Duru and Delphine Le-Cunff and Arthur Arnaud and Jean-Marie Bluet and Georges Bremond},
year = {2020},
journal = {2020 31st Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC)},
doi = {10.1109/asmc49169.2020.9185305},
url = {https://doi.org/10.1109/asmc49169.2020.9185305}
}RIS
TY - JOUR TI - Investigation of Photoluminescence Voltage PL-V Measurement: Correlation to Capacitance Voltage C-V for Si/Dielectric Interface Characterization AU - Thomas Nassiet AU - Romain Duru AU - Delphine Le-Cunff AU - Arthur Arnaud AU - Jean-Marie Bluet AU - Georges Bremond PY - 2020 JO - 2020 31st Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC) DO - 10.1109/asmc49169.2020.9185305 UR - https://doi.org/10.1109/asmc49169.2020.9185305 ER -
APA
Nassiet, T., Duru, R., Le-Cunff, D., Arnaud, A., Bluet, J., & Bremond, G. (2020). Investigation of Photoluminescence Voltage PL-V Measurement: Correlation to Capacitance Voltage C-V for Si/Dielectric Interface Characterization. 2020 31st Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC). https://doi.org/10.1109/asmc49169.2020.9185305
Source records
- crossref · retrieved 2026-09-26T16:42:45.759Z