Improved robustness of AlGaN/GaN HEMTs using Deuterium to passivate the structural defects

Jean-Guy Tartarin, Guilhem Astre, Laurent Bary, Jacques Chevallier, S Delage°

Open source

DOI
10.1109/commad.2008.4802078
Published
2008-08
Container
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Publisher
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Open access
yes

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BibTeX

@article{allodium:10.1109/commad.2008.4802078,
  title = {Improved robustness of AlGaN/GaN HEMTs using Deuterium to passivate the structural defects},
  author = {Jean-Guy Tartarin and Guilhem Astre and Laurent Bary and Jacques Chevallier and S Delage°},
  year = {2008},
  doi = {10.1109/commad.2008.4802078},
  url = {https://doi.org/10.1109/commad.2008.4802078}
}

RIS

TY  - JOUR
TI  - Improved robustness of AlGaN/GaN HEMTs using Deuterium to passivate the structural defects
AU  - Jean-Guy Tartarin
AU  - Guilhem Astre
AU  - Laurent Bary
AU  - Jacques Chevallier
AU  - S Delage°
PY  - 2008
DO  - 10.1109/commad.2008.4802078
UR  - https://doi.org/10.1109/commad.2008.4802078
ER  - 

APA

Tartarin, J., Astre, G., Bary, L., Chevallier, J., & Delage°, S. (2008). Improved robustness of AlGaN/GaN HEMTs using Deuterium to passivate the structural defects. https://doi.org/10.1109/commad.2008.4802078

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