160W InAlN/GaN HEMTs amplifier at 2 GHz with optimized thermal management
- DOI
- 10.1109/csics.2012.6340059
- Published
- 2012
- Container
- Not recorded
- Publisher
- Not recorded
- Open access
- no
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Cite this work
BibTeX
@article{allodium:10.1109/csics.2012.6340059,
title = {160W InAlN/GaN HEMTs amplifier at 2 GHz with optimized thermal management},
author = {Stéphane Piotrowicz and Olivier Jardel and Jean-Claude Jacquet and D. Lancereau and Raphaël Aubry and Erwan Morvan and Nicolas Sarazin and Jérémy Dufraisse and Charu Dua and Mourad Oualli and Eric Chartier and Marie-Antoinette Di Forte-Poisson and Christophe Gaquière and Sylvain Laurent Delage},
year = {2012},
doi = {10.1109/csics.2012.6340059},
url = {https://doi.org/10.1109/csics.2012.6340059}
}RIS
TY - JOUR TI - 160W InAlN/GaN HEMTs amplifier at 2 GHz with optimized thermal management AU - Stéphane Piotrowicz AU - Olivier Jardel AU - Jean-Claude Jacquet AU - D. Lancereau AU - Raphaël Aubry AU - Erwan Morvan AU - Nicolas Sarazin AU - Jérémy Dufraisse AU - Charu Dua AU - Mourad Oualli AU - Eric Chartier AU - Marie-Antoinette Di Forte-Poisson AU - Christophe Gaquière AU - Sylvain Laurent Delage PY - 2012 DO - 10.1109/csics.2012.6340059 UR - https://doi.org/10.1109/csics.2012.6340059 ER -
APA
Piotrowicz, S., Jardel, O., Jacquet, J., Lancereau, D., Aubry, R., Morvan, E., Sarazin, N., Dufraisse, J., Dua, C., Oualli, M., Chartier, E., Forte-Poisson, M. D., Gaquière, C., & Delage, S. L. (2012). 160W InAlN/GaN HEMTs amplifier at 2 GHz with optimized thermal management. https://doi.org/10.1109/csics.2012.6340059
Source records
- hal · retrieved 2026-09-25T21:31:31.567Z