A 60GHz power amplifier with 14.5dBm saturation power and 25% peak PAE in CMOS 65nm SOI
- DOI
- 10.1109/esscirc.2009.5326013
- Published
- 2009
- Container
- Not recorded
- Publisher
- _
- Open access
- no
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BibTeX
@article{allodium:10.1109/esscirc.2009.5326013,
title = {A 60GHz power amplifier with 14.5dBm saturation power and 25\% peak PAE in CMOS 65nm SOI},
author = {A. Siligaris and Y. Hamada and C. Mounet and C. Raynaud and B. Martineau and N. Deparis and N. Rolland and M. Fukaishi and P. Vincent},
year = {2009},
doi = {10.1109/esscirc.2009.5326013},
url = {https://doi.org/10.1109/esscirc.2009.5326013}
}RIS
TY - JOUR TI - A 60GHz power amplifier with 14.5dBm saturation power and 25% peak PAE in CMOS 65nm SOI AU - A. Siligaris AU - Y. Hamada AU - C. Mounet AU - C. Raynaud AU - B. Martineau AU - N. Deparis AU - N. Rolland AU - M. Fukaishi AU - P. Vincent PY - 2009 DO - 10.1109/esscirc.2009.5326013 UR - https://doi.org/10.1109/esscirc.2009.5326013 ER -
APA
Siligaris, A., Hamada, Y., Mounet, C., Raynaud, C., Martineau, B., Deparis, N., Rolland, N., Fukaishi, M., & Vincent, P. (2009). A 60GHz power amplifier with 14.5dBm saturation power and 25% peak PAE in CMOS 65nm SOI. https://doi.org/10.1109/esscirc.2009.5326013
Source records
- hal · retrieved 2026-09-25T13:03:37.406Z