A 60GHz power amplifier with 14.5dBm saturation power and 25% peak PAE in CMOS 65nm SOI

A. Siligaris, Y. Hamada, C. Mounet, C. Raynaud, B. Martineau, N. Deparis, N. Rolland, M. Fukaishi, P. Vincent

Open source

DOI
10.1109/esscirc.2009.5326013
Published
2009
Container
Not recorded
Publisher
_
Open access
no

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BibTeX

@article{allodium:10.1109/esscirc.2009.5326013,
  title = {A 60GHz power amplifier with 14.5dBm saturation power and 25\% peak PAE in CMOS 65nm SOI},
  author = {A. Siligaris and Y. Hamada and C. Mounet and C. Raynaud and B. Martineau and N. Deparis and N. Rolland and M. Fukaishi and P. Vincent},
  year = {2009},
  doi = {10.1109/esscirc.2009.5326013},
  url = {https://doi.org/10.1109/esscirc.2009.5326013}
}

RIS

TY  - JOUR
TI  - A 60GHz power amplifier with 14.5dBm saturation power and 25% peak PAE in CMOS 65nm SOI
AU  - A. Siligaris
AU  - Y. Hamada
AU  - C. Mounet
AU  - C. Raynaud
AU  - B. Martineau
AU  - N. Deparis
AU  - N. Rolland
AU  - M. Fukaishi
AU  - P. Vincent
PY  - 2009
DO  - 10.1109/esscirc.2009.5326013
UR  - https://doi.org/10.1109/esscirc.2009.5326013
ER  - 

APA

Siligaris, A., Hamada, Y., Mounet, C., Raynaud, C., Martineau, B., Deparis, N., Rolland, N., Fukaishi, M., & Vincent, P. (2009). A 60GHz power amplifier with 14.5dBm saturation power and 25% peak PAE in CMOS 65nm SOI. https://doi.org/10.1109/esscirc.2009.5326013

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