Flexible Microcrystalline Silicon Source-Gated Transistors with Negliglible DC Performace Degradation at 2.5 mm Bending Radius
- DOI
- 10.1109/fleps53764.2022.9781587
- Published
- 2022-07-10
- Container
- 2022 IEEE International Conference on Flexible and Printable Sensors and Systems (FLEPS)
- Publisher
- IEEE
- Open access
- unknown
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Cite this work
BibTeX
@article{allodium:10.1109/fleps53764.2022.9781587,
title = {Flexible Microcrystalline Silicon Source-Gated Transistors with Negliglible DC Performace Degradation at 2.5 mm Bending Radius},
author = {Eva Bestelink and Jean-Charles Fustec and Olivier de Sagazan and Hao-Jing Teng and Radu A. Sporea},
year = {2022},
journal = {2022 IEEE International Conference on Flexible and Printable Sensors and Systems (FLEPS)},
doi = {10.1109/fleps53764.2022.9781587},
url = {https://doi.org/10.1109/fleps53764.2022.9781587}
}RIS
TY - JOUR TI - Flexible Microcrystalline Silicon Source-Gated Transistors with Negliglible DC Performace Degradation at 2.5 mm Bending Radius AU - Eva Bestelink AU - Jean-Charles Fustec AU - Olivier de Sagazan AU - Hao-Jing Teng AU - Radu A. Sporea PY - 2022 JO - 2022 IEEE International Conference on Flexible and Printable Sensors and Systems (FLEPS) DO - 10.1109/fleps53764.2022.9781587 UR - https://doi.org/10.1109/fleps53764.2022.9781587 ER -
APA
Bestelink, E., Fustec, J., Sagazan, O. D., Teng, H., & Sporea, R. A. (2022). Flexible Microcrystalline Silicon Source-Gated Transistors with Negliglible DC Performace Degradation at 2.5 mm Bending Radius. 2022 IEEE International Conference on Flexible and Printable Sensors and Systems (FLEPS). https://doi.org/10.1109/fleps53764.2022.9781587
Source records
- crossref · retrieved 2026-09-27T16:59:28.058Z