SIMNI SOI formed by high intensity nitrogen implantation
- DOI
- 10.1109/hkedm.1996.566298
- Published
- Not recorded
- Container
- Proceedings 1996 IEEE Hong Kong Electron Devices Meeting
- Publisher
- IEEE
- Open access
- unknown
Credibility signals
uncertain Score 58/100 under policy 1.0.0. This is a metadata assessment, not a judgment of the paper's conclusions.
Show all credibility signals
- supportingDOI registered: A matching record was returned by Crossref.
- supportingDOI resolves: A matching record was returned by Crossref.
- not scoredDirectory of Open Access Journals: No matching DOAJ record was present in this response. No allow-list match; this is not evidence of low credibility.
- not scoredMEDLINE indexed: Not checked or no result supplied; no credibility inference made.
- not scoredOpenAlex core source: Not checked or no result supplied; no credibility inference made.
- not scoredKnown publisher allow-list: Not checked or no result supplied; no credibility inference made.
- not scoredROR affiliation: Not checked or no result supplied; no credibility inference made.
- not scoredRetraction Watch retraction: No retraction notice matched this DOI in the deployed snapshot. No matching event found; coverage may be incomplete.
- not scoredRetraction Watch expression of concern: No expression of concern notice matched this DOI in the deployed snapshot. No matching event found; coverage may be incomplete.
- not scoredRetraction Watch correction: No correction notice matched this DOI in the deployed snapshot. No matching event found; coverage may be incomplete.
- not scoredRetraction Watch reinstatement: No reinstatement notice matched this DOI in the deployed snapshot. No matching event found; coverage may be incomplete.
- not scoredOpen access status: Not checked or no result supplied; no credibility inference made.
- not scoredPublication license: Not checked or no result supplied; no credibility inference made.
- not scoredPublication version: A publication version was supplied but is not scored.
- cautionMetadata completeness: 5 of 6 scored descriptive metadata groups are present; missing fields increase uncertainty.
Cite this work
BibTeX
@article{allodium:10.1109/hkedm.1996.566298,
title = {SIMNI SOI formed by high intensity nitrogen implantation},
author = {M.C. Poon and S.P. Wong and Y.W. Lam and P.K. Chu and J.K.O. Sin},
journal = {Proceedings 1996 IEEE Hong Kong Electron Devices Meeting},
doi = {10.1109/hkedm.1996.566298},
url = {https://doi.org/10.1109/hkedm.1996.566298}
}RIS
TY - JOUR TI - SIMNI SOI formed by high intensity nitrogen implantation AU - M.C. Poon AU - S.P. Wong AU - Y.W. Lam AU - P.K. Chu AU - J.K.O. Sin JO - Proceedings 1996 IEEE Hong Kong Electron Devices Meeting DO - 10.1109/hkedm.1996.566298 UR - https://doi.org/10.1109/hkedm.1996.566298 ER -
APA
Poon, M., Wong, S., Lam, Y., Chu, P., & Sin, J. (n.d.). SIMNI SOI formed by high intensity nitrogen implantation. Proceedings 1996 IEEE Hong Kong Electron Devices Meeting. https://doi.org/10.1109/hkedm.1996.566298
Source records
- crossref · retrieved 2026-09-26T23:38:12.315Z