A comparative study between 4H-SiC and silicon power PiN diode having the same breakdown voltage 4KV
- DOI
- 10.1109/iceesa.2013.6578428
- Published
- 2013-03
- Container
- 2013 International Conference on Electrical Engineering and Software Applications
- Publisher
- IEEE
- Open access
- unknown
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Cite this work
BibTeX
@article{allodium:10.1109/iceesa.2013.6578428,
title = {A comparative study between 4H-SiC and silicon power PiN diode having the same breakdown voltage 4KV},
author = {Atef Jedidi and Hatem Garrab and Kamel Besbes},
year = {2013},
journal = {2013 International Conference on Electrical Engineering and Software Applications},
doi = {10.1109/iceesa.2013.6578428},
url = {https://doi.org/10.1109/iceesa.2013.6578428}
}RIS
TY - JOUR TI - A comparative study between 4H-SiC and silicon power PiN diode having the same breakdown voltage 4KV AU - Atef Jedidi AU - Hatem Garrab AU - Kamel Besbes PY - 2013 JO - 2013 International Conference on Electrical Engineering and Software Applications DO - 10.1109/iceesa.2013.6578428 UR - https://doi.org/10.1109/iceesa.2013.6578428 ER -
APA
Jedidi, A., Garrab, H., & Besbes, K. (2013). A comparative study between 4H-SiC and silicon power PiN diode having the same breakdown voltage 4KV. 2013 International Conference on Electrical Engineering and Software Applications. https://doi.org/10.1109/iceesa.2013.6578428
Source records
- crossref · retrieved 2026-11-04T09:41:07.301Z