InGaAs base infrared hot-electron transistors
- DOI
- 10.1109/iedm.1991.235301
- Published
- Not recorded
- Container
- International Electron Devices Meeting 1991 [Technical Digest]
- Publisher
- IEEE
- Open access
- unknown
Credibility signals
uncertain Score 58/100 under policy 1.0.0. This is a metadata assessment, not a judgment of the paper's conclusions.
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Cite this work
BibTeX
@article{allodium:10.1109/iedm.1991.235301,
title = {InGaAs base infrared hot-electron transistors},
author = {K.K. Choi and M. Taysing-Lara and W. Chang and G.J. Iafrate},
journal = {International Electron Devices Meeting 1991 [Technical Digest]},
doi = {10.1109/iedm.1991.235301},
url = {https://doi.org/10.1109/iedm.1991.235301}
}RIS
TY - JOUR TI - InGaAs base infrared hot-electron transistors AU - K.K. Choi AU - M. Taysing-Lara AU - W. Chang AU - G.J. Iafrate JO - International Electron Devices Meeting 1991 [Technical Digest] DO - 10.1109/iedm.1991.235301 UR - https://doi.org/10.1109/iedm.1991.235301 ER -
APA
Choi, K., Taysing-Lara, M., Chang, W., & Iafrate, G. (n.d.). InGaAs base infrared hot-electron transistors. International Electron Devices Meeting 1991 [Technical Digest]. https://doi.org/10.1109/iedm.1991.235301
Source records
- crossref · retrieved 2026-09-25T11:31:02.100Z