Application of JVD nitride gate dielectric to a 0.35 micron CMOS process for reduction of gate leakage current and boron penetration
- DOI
- 10.1109/iedm.1997.650467
- Published
- Not recorded
- Container
- International Electron Devices Meeting. IEDM Technical Digest
- Publisher
- IEEE
- Open access
- unknown
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Cite this work
BibTeX
@article{allodium:10.1109/iedm.1997.650467,
title = {Application of JVD nitride gate dielectric to a 0.35 micron CMOS process for reduction of gate leakage current and boron penetration},
author = {H.-H. Tseng and P.G.Y. Tsui and P.J. Tobin and J. Mogab and M. Khare and X.W. Wang and T.P. Ma and R. Hegde and C. Hobbs and J. Veteran and M. Hartig and G. Kenig and V. Wang and R. Blumenthal and R. Cotton and V. Kaushik and T. Tamagawa and B.L. Halpern and G.J. Cui and J.J. Schmitt},
journal = {International Electron Devices Meeting. IEDM Technical Digest},
doi = {10.1109/iedm.1997.650467},
url = {https://doi.org/10.1109/iedm.1997.650467}
}RIS
TY - JOUR TI - Application of JVD nitride gate dielectric to a 0.35 micron CMOS process for reduction of gate leakage current and boron penetration AU - H.-H. Tseng AU - P.G.Y. Tsui AU - P.J. Tobin AU - J. Mogab AU - M. Khare AU - X.W. Wang AU - T.P. Ma AU - R. Hegde AU - C. Hobbs AU - J. Veteran AU - M. Hartig AU - G. Kenig AU - V. Wang AU - R. Blumenthal AU - R. Cotton AU - V. Kaushik AU - T. Tamagawa AU - B.L. Halpern AU - G.J. Cui AU - J.J. Schmitt JO - International Electron Devices Meeting. IEDM Technical Digest DO - 10.1109/iedm.1997.650467 UR - https://doi.org/10.1109/iedm.1997.650467 ER -
APA
Tseng, H., Tsui, P., Tobin, P., Mogab, J., Khare, M., Wang, X., Ma, T., Hegde, R., Hobbs, C., Veteran, J., Hartig, M., Kenig, G., Wang, V., Blumenthal, R., Cotton, R., Kaushik, V., Tamagawa, T., Halpern, B., Cui, G., & Schmitt, J. (n.d.). Application of JVD nitride gate dielectric to a 0.35 micron CMOS process for reduction of gate leakage current and boron penetration. International Electron Devices Meeting. IEDM Technical Digest. https://doi.org/10.1109/iedm.1997.650467
Source records
- crossref · retrieved 2026-09-27T06:22:00.778Z