Reduction of threshold voltage deviation in Damascene metal gate MOSFETs
- DOI
- 10.1109/iedm.1999.823892
- Published
- Not recorded
- Container
- International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318)
- Publisher
- IEEE
- Open access
- unknown
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Cite this work
BibTeX
@article{allodium:10.1109/iedm.1999.823892,
title = {Reduction of threshold voltage deviation in Damascene metal gate MOSFETs},
author = {A. Yagishita and T. Saito and K. Nakajima and S. Inumiya and K. Matsuo and Y. Akasaka and Y. Ozawa and H. Yano and G. Minamibaba and Y. Matsui and Y. Tsunashima and K. Suguro and T. Arikado and K. Okumura},
journal = {International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318)},
doi = {10.1109/iedm.1999.823892},
url = {https://doi.org/10.1109/iedm.1999.823892}
}RIS
TY - JOUR TI - Reduction of threshold voltage deviation in Damascene metal gate MOSFETs AU - A. Yagishita AU - T. Saito AU - K. Nakajima AU - S. Inumiya AU - K. Matsuo AU - Y. Akasaka AU - Y. Ozawa AU - H. Yano AU - G. Minamibaba AU - Y. Matsui AU - Y. Tsunashima AU - K. Suguro AU - T. Arikado AU - K. Okumura JO - International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318) DO - 10.1109/iedm.1999.823892 UR - https://doi.org/10.1109/iedm.1999.823892 ER -
APA
Yagishita, A., Saito, T., Nakajima, K., Inumiya, S., Matsuo, K., Akasaka, Y., Ozawa, Y., Yano, H., Minamibaba, G., Matsui, Y., Tsunashima, Y., Suguro, K., Arikado, T., & Okumura, K. (n.d.). Reduction of threshold voltage deviation in Damascene metal gate MOSFETs. International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318). https://doi.org/10.1109/iedm.1999.823892
Source records
- crossref · retrieved 2026-09-27T05:31:30.349Z