Dynamic threshold voltage damascene metal gate MOSFET (DT-DMG-MOS) with low threshold voltage, high drive current, and uniform electrical characteristics
- DOI
- 10.1109/iedm.2000.904406
- Published
- Not recorded
- Container
- International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138)
- Publisher
- IEEE
- Open access
- unknown
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Cite this work
BibTeX
@article{allodium:10.1109/iedm.2000.904406,
title = {Dynamic threshold voltage damascene metal gate MOSFET (DT-DMG-MOS) with low threshold voltage, high drive current, and uniform electrical characteristics},
author = {A. Yagishita and T. Saito and S. Inumiya and K. Matsuo and Y. Tsunashima and K. Suguro and T. Arikado},
journal = {International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138)},
doi = {10.1109/iedm.2000.904406},
url = {https://doi.org/10.1109/iedm.2000.904406}
}RIS
TY - JOUR TI - Dynamic threshold voltage damascene metal gate MOSFET (DT-DMG-MOS) with low threshold voltage, high drive current, and uniform electrical characteristics AU - A. Yagishita AU - T. Saito AU - S. Inumiya AU - K. Matsuo AU - Y. Tsunashima AU - K. Suguro AU - T. Arikado JO - International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138) DO - 10.1109/iedm.2000.904406 UR - https://doi.org/10.1109/iedm.2000.904406 ER -
APA
Yagishita, A., Saito, T., Inumiya, S., Matsuo, K., Tsunashima, Y., Suguro, K., & Arikado, T. (n.d.). Dynamic threshold voltage damascene metal gate MOSFET (DT-DMG-MOS) with low threshold voltage, high drive current, and uniform electrical characteristics. International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138). https://doi.org/10.1109/iedm.2000.904406
Source records
- crossref · retrieved 2026-09-27T00:16:16.258Z