Characterization of electronic transport through Si dot with Ge core using AFM conducting probe
- DOI
- 10.1109/imnc.2003.1268499
- Published
- Not recorded
- Container
- Digest of Papers Microprocesses and Nanotechnology 2003. 2003 International Microprocesses and Nanotechnology Conference
- Publisher
- Japan Soc. of Appl. Phys
- Open access
- unknown
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uncertain Score 58/100 under policy 1.0.0. This is a metadata assessment, not a judgment of the paper's conclusions.
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Cite this work
BibTeX
@article{allodium:10.1109/imnc.2003.1268499,
title = {Characterization of electronic transport through Si dot with Ge core using AFM conducting probe},
author = {Y. Darma and S. Miyazaki},
journal = {Digest of Papers Microprocesses and Nanotechnology 2003. 2003 International Microprocesses and Nanotechnology Conference},
doi = {10.1109/imnc.2003.1268499},
url = {https://doi.org/10.1109/imnc.2003.1268499}
}RIS
TY - JOUR TI - Characterization of electronic transport through Si dot with Ge core using AFM conducting probe AU - Y. Darma AU - S. Miyazaki JO - Digest of Papers Microprocesses and Nanotechnology 2003. 2003 International Microprocesses and Nanotechnology Conference DO - 10.1109/imnc.2003.1268499 UR - https://doi.org/10.1109/imnc.2003.1268499 ER -
APA
Darma, Y., & Miyazaki, S. (n.d.). Characterization of electronic transport through Si dot with Ge core using AFM conducting probe. Digest of Papers Microprocesses and Nanotechnology 2003. 2003 International Microprocesses and Nanotechnology Conference. https://doi.org/10.1109/imnc.2003.1268499
Source records
- crossref · retrieved 2026-09-27T10:37:14.085Z