High temperature behaviour of 3.5 kV 4H-SiC JBS diodes
- DOI
- 10.1109/ispsd.2007.4294988
- Published
- 2007-05
- Container
- Proceedings of the 19th International Symposium on Power Semiconductor Devices and IC's
- Publisher
- IEEE
- Open access
- unknown
Credibility signals
uncertain Score 64/100 under policy 1.0.0. This is a metadata assessment, not a judgment of the paper's conclusions.
Show all credibility signals
- supportingDOI registered: A matching record was returned by Crossref.
- supportingDOI resolves: A matching record was returned by Crossref.
- not scoredDirectory of Open Access Journals: No matching DOAJ record was present in this response. No allow-list match; this is not evidence of low credibility.
- not scoredMEDLINE indexed: Not checked or no result supplied; no credibility inference made.
- not scoredOpenAlex core source: Not checked or no result supplied; no credibility inference made.
- not scoredKnown publisher allow-list: Not checked or no result supplied; no credibility inference made.
- not scoredROR affiliation: Not checked or no result supplied; no credibility inference made.
- not scoredRetraction Watch retraction: No retraction notice matched this DOI in the deployed snapshot. No matching event found; coverage may be incomplete.
- not scoredRetraction Watch expression of concern: No expression of concern notice matched this DOI in the deployed snapshot. No matching event found; coverage may be incomplete.
- not scoredRetraction Watch correction: No correction notice matched this DOI in the deployed snapshot. No matching event found; coverage may be incomplete.
- not scoredRetraction Watch reinstatement: No reinstatement notice matched this DOI in the deployed snapshot. No matching event found; coverage may be incomplete.
- not scoredOpen access status: Not checked or no result supplied; no credibility inference made.
- not scoredPublication license: Not checked or no result supplied; no credibility inference made.
- not scoredPublication version: A publication version was supplied but is not scored.
- supportingMetadata completeness: All 6 scored descriptive metadata groups are present.
Cite this work
BibTeX
@article{allodium:10.1109/ispsd.2007.4294988,
title = {High temperature behaviour of 3.5 kV 4H-SiC JBS diodes},
author = {P. Brosselard and X. Jorda and M. Vellvehi and P. Godignon and J. Millan and J.P. Bergman and B. Lambert},
year = {2007},
journal = {Proceedings of the 19th International Symposium on Power Semiconductor Devices and IC's},
doi = {10.1109/ispsd.2007.4294988},
url = {https://doi.org/10.1109/ispsd.2007.4294988}
}RIS
TY - JOUR TI - High temperature behaviour of 3.5 kV 4H-SiC JBS diodes AU - P. Brosselard AU - X. Jorda AU - M. Vellvehi AU - P. Godignon AU - J. Millan AU - J.P. Bergman AU - B. Lambert PY - 2007 JO - Proceedings of the 19th International Symposium on Power Semiconductor Devices and IC's DO - 10.1109/ispsd.2007.4294988 UR - https://doi.org/10.1109/ispsd.2007.4294988 ER -
APA
Brosselard, P., Jorda, X., Vellvehi, M., Godignon, P., Millan, J., Bergman, J., & Lambert, B. (2007). High temperature behaviour of 3.5 kV 4H-SiC JBS diodes. Proceedings of the 19th International Symposium on Power Semiconductor Devices and IC's. https://doi.org/10.1109/ispsd.2007.4294988
Source records
- crossref · retrieved 2026-09-27T08:47:33.897Z