CMOS Gate Driver with Integrated Gate Current Monitoring Method for Fault Under Load Short Circuit Detection of SiC Power Modules

Anas El Boubkari, Nicolas Rouger, Frédéric Richardeau, Pierre Calmes, Matthew Bacchi, Marc Cousineau, Jean‐marc Blaquiere, Sébastien Vinnac

Open source

DOI
10.1109/ispsd59661.2024.10579581
Published
2024-06-02
Container
Not recorded
Publisher
IEEE
Open access
yes

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BibTeX

@article{allodium:10.1109/ispsd59661.2024.10579581,
  title = {CMOS Gate Driver with Integrated Gate Current Monitoring Method for Fault Under Load Short Circuit Detection of SiC Power Modules},
  author = {Anas El Boubkari and Nicolas Rouger and Frédéric Richardeau and Pierre Calmes and Matthew Bacchi and Marc Cousineau and Jean‐marc Blaquiere and Sébastien Vinnac},
  year = {2024},
  doi = {10.1109/ispsd59661.2024.10579581},
  url = {https://doi.org/10.1109/ispsd59661.2024.10579581}
}

RIS

TY  - JOUR
TI  - CMOS Gate Driver with Integrated Gate Current Monitoring Method for Fault Under Load Short Circuit Detection of SiC Power Modules
AU  - Anas El Boubkari
AU  - Nicolas Rouger
AU  - Frédéric Richardeau
AU  - Pierre Calmes
AU  - Matthew Bacchi
AU  - Marc Cousineau
AU  - Jean‐marc Blaquiere
AU  - Sébastien Vinnac
PY  - 2024
DO  - 10.1109/ispsd59661.2024.10579581
UR  - https://doi.org/10.1109/ispsd59661.2024.10579581
ER  - 

APA

Boubkari, A. E., Rouger, N., Richardeau, F., Calmes, P., Bacchi, M., Cousineau, M., Blaquiere, J., & Vinnac, S. (2024). CMOS Gate Driver with Integrated Gate Current Monitoring Method for Fault Under Load Short Circuit Detection of SiC Power Modules. https://doi.org/10.1109/ispsd59661.2024.10579581

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