CMOS Gate Driver with Integrated Gate Current Monitoring Method for Fault Under Load Short Circuit Detection of SiC Power Modules
- DOI
- 10.1109/ispsd59661.2024.10579581
- Published
- 2024-06-02
- Container
- Not recorded
- Publisher
- IEEE
- Open access
- yes
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Cite this work
BibTeX
@article{allodium:10.1109/ispsd59661.2024.10579581,
title = {CMOS Gate Driver with Integrated Gate Current Monitoring Method for Fault Under Load Short Circuit Detection of SiC Power Modules},
author = {Anas El Boubkari and Nicolas Rouger and Frédéric Richardeau and Pierre Calmes and Matthew Bacchi and Marc Cousineau and Jean‐marc Blaquiere and Sébastien Vinnac},
year = {2024},
doi = {10.1109/ispsd59661.2024.10579581},
url = {https://doi.org/10.1109/ispsd59661.2024.10579581}
}RIS
TY - JOUR TI - CMOS Gate Driver with Integrated Gate Current Monitoring Method for Fault Under Load Short Circuit Detection of SiC Power Modules AU - Anas El Boubkari AU - Nicolas Rouger AU - Frédéric Richardeau AU - Pierre Calmes AU - Matthew Bacchi AU - Marc Cousineau AU - Jean‐marc Blaquiere AU - Sébastien Vinnac PY - 2024 DO - 10.1109/ispsd59661.2024.10579581 UR - https://doi.org/10.1109/ispsd59661.2024.10579581 ER -
APA
Boubkari, A. E., Rouger, N., Richardeau, F., Calmes, P., Bacchi, M., Cousineau, M., Blaquiere, J., & Vinnac, S. (2024). CMOS Gate Driver with Integrated Gate Current Monitoring Method for Fault Under Load Short Circuit Detection of SiC Power Modules. https://doi.org/10.1109/ispsd59661.2024.10579581
Source records
- hal · retrieved 2026-09-27T04:46:27.804Z